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|Title:||A CMOS readout circuit for silicon resonant accelerometer with 32-ppb bias stability||Authors:||He, L.
CMOS readout circuit
|Issue Date:||2007||Citation:||He, L., Xu, Y.P., Palaniapan, M. (2007). A CMOS readout circuit for silicon resonant accelerometer with 32-ppb bias stability. IEEE Symposium on VLSI Circuits, Digest of Technical Papers : 146-147. ScholarBank@NUS Repository. https://doi.org/10.1109/VLSIC.2007.4342692||Abstract:||This paper describes a fully-differential CMOS readout circuit for silicon micro-resonant accelerometer. Tested with a SOI resonator, the readout chip sustains the oscillation at 110 kHz with a phase noise of -36dBc@1Hz and a bias stability of 0.0035Hz or 32ppb, which can be translated to an amplitude noise of 1Å/√Hz down to 0.05Hz and stability of 0.22Å up to 100 seconds. The chip is fabricated in a 0.35-um CMOS process and draws 5mA under a 3.3-V single supply.||Source Title:||IEEE Symposium on VLSI Circuits, Digest of Technical Papers||URI:||http://scholarbank.nus.edu.sg/handle/10635/68732||ISBN:||9784900784048||DOI:||10.1109/VLSIC.2007.4342692|
|Appears in Collections:||Staff Publications|
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