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https://doi.org/10.1109/VLSIC.2007.4342692
Title: | A CMOS readout circuit for silicon resonant accelerometer with 32-ppb bias stability | Authors: | He, L. Xu, Y.P. Palaniapan, M. |
Keywords: | Bias stability CMOS readout circuit MEMS resonator |
Issue Date: | 2007 | Citation: | He, L., Xu, Y.P., Palaniapan, M. (2007). A CMOS readout circuit for silicon resonant accelerometer with 32-ppb bias stability. IEEE Symposium on VLSI Circuits, Digest of Technical Papers : 146-147. ScholarBank@NUS Repository. https://doi.org/10.1109/VLSIC.2007.4342692 | Abstract: | This paper describes a fully-differential CMOS readout circuit for silicon micro-resonant accelerometer. Tested with a SOI resonator, the readout chip sustains the oscillation at 110 kHz with a phase noise of -36dBc@1Hz and a bias stability of 0.0035Hz or 32ppb, which can be translated to an amplitude noise of 1Å/√Hz down to 0.05Hz and stability of 0.22Å up to 100 seconds. The chip is fabricated in a 0.35-um CMOS process and draws 5mA under a 3.3-V single supply. | Source Title: | IEEE Symposium on VLSI Circuits, Digest of Technical Papers | URI: | http://scholarbank.nus.edu.sg/handle/10635/68732 | ISBN: | 9784900784048 | DOI: | 10.1109/VLSIC.2007.4342692 |
Appears in Collections: | Staff Publications |
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