Please use this identifier to cite or link to this item:
https://doi.org/10.1109/VLSIC.2007.4342692
DC Field | Value | |
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dc.title | A CMOS readout circuit for silicon resonant accelerometer with 32-ppb bias stability | |
dc.contributor.author | He, L. | |
dc.contributor.author | Xu, Y.P. | |
dc.contributor.author | Palaniapan, M. | |
dc.date.accessioned | 2014-06-19T02:52:36Z | |
dc.date.available | 2014-06-19T02:52:36Z | |
dc.date.issued | 2007 | |
dc.identifier.citation | He, L., Xu, Y.P., Palaniapan, M. (2007). A CMOS readout circuit for silicon resonant accelerometer with 32-ppb bias stability. IEEE Symposium on VLSI Circuits, Digest of Technical Papers : 146-147. ScholarBank@NUS Repository. https://doi.org/10.1109/VLSIC.2007.4342692 | |
dc.identifier.isbn | 9784900784048 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/68732 | |
dc.description.abstract | This paper describes a fully-differential CMOS readout circuit for silicon micro-resonant accelerometer. Tested with a SOI resonator, the readout chip sustains the oscillation at 110 kHz with a phase noise of -36dBc@1Hz and a bias stability of 0.0035Hz or 32ppb, which can be translated to an amplitude noise of 1Å/√Hz down to 0.05Hz and stability of 0.22Å up to 100 seconds. The chip is fabricated in a 0.35-um CMOS process and draws 5mA under a 3.3-V single supply. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/VLSIC.2007.4342692 | |
dc.source | Scopus | |
dc.subject | Bias stability | |
dc.subject | CMOS readout circuit | |
dc.subject | MEMS resonator | |
dc.type | Conference Paper | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/VLSIC.2007.4342692 | |
dc.description.sourcetitle | IEEE Symposium on VLSI Circuits, Digest of Technical Papers | |
dc.description.page | 146-147 | |
dc.description.coden | 85PXA | |
dc.identifier.isiut | 000250541000054 | |
Appears in Collections: | Staff Publications |
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