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https://doi.org/10.1088/1367-2630/7/1/197
Title: | Memory in quantum-dot photoluminescence blinking | Authors: | Stefani, F.D. Zhong, X. Knoll, W. Han, M. Kreiter, M. |
Issue Date: | 19-Sep-2005 | Citation: | Stefani, F.D., Zhong, X., Knoll, W., Han, M., Kreiter, M. (2005-09-19). Memory in quantum-dot photoluminescence blinking. New Journal of Physics 7 : -. ScholarBank@NUS Repository. https://doi.org/10.1088/1367-2630/7/1/197 | Abstract: | We demonstrate that subsequent on- and off-times of the luminescence blinking of semiconductor quantum dots (QDs) are correlated, indicating that the process behind is not memoryless. A residual memory, which has been overlooked in previous investigations of the blinking, is found to last for several (∼40) detected on/off cycles. No influence of the substrate nature or the excitation intensity is observed, pointing to a process intrinsic to the QDs. These results should encourage re-analysis of existing data and may represent the key to understand the underlying physical mechanism of QD luminescence blinking. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft. | Source Title: | New Journal of Physics | URI: | http://scholarbank.nus.edu.sg/handle/10635/67152 | ISSN: | 13672630 | DOI: | 10.1088/1367-2630/7/1/197 |
Appears in Collections: | Staff Publications |
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