Please use this identifier to cite or link to this item: https://doi.org/10.1088/1367-2630/7/1/197
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dc.titleMemory in quantum-dot photoluminescence blinking
dc.contributor.authorStefani, F.D.
dc.contributor.authorZhong, X.
dc.contributor.authorKnoll, W.
dc.contributor.authorHan, M.
dc.contributor.authorKreiter, M.
dc.date.accessioned2014-06-17T09:45:03Z
dc.date.available2014-06-17T09:45:03Z
dc.date.issued2005-09-19
dc.identifier.citationStefani, F.D., Zhong, X., Knoll, W., Han, M., Kreiter, M. (2005-09-19). Memory in quantum-dot photoluminescence blinking. New Journal of Physics 7 : -. ScholarBank@NUS Repository. https://doi.org/10.1088/1367-2630/7/1/197
dc.identifier.issn13672630
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/67152
dc.description.abstractWe demonstrate that subsequent on- and off-times of the luminescence blinking of semiconductor quantum dots (QDs) are correlated, indicating that the process behind is not memoryless. A residual memory, which has been overlooked in previous investigations of the blinking, is found to last for several (∼40) detected on/off cycles. No influence of the substrate nature or the excitation intensity is observed, pointing to a process intrinsic to the QDs. These results should encourage re-analysis of existing data and may represent the key to understand the underlying physical mechanism of QD luminescence blinking. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentBIOENGINEERING
dc.contributor.departmentMATERIALS SCIENCE
dc.description.doi10.1088/1367-2630/7/1/197
dc.description.sourcetitleNew Journal of Physics
dc.description.volume7
dc.description.page-
dc.identifier.isiut000231984600001
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