Please use this identifier to cite or link to this item:
https://doi.org/10.1088/1367-2630/7/1/197
DC Field | Value | |
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dc.title | Memory in quantum-dot photoluminescence blinking | |
dc.contributor.author | Stefani, F.D. | |
dc.contributor.author | Zhong, X. | |
dc.contributor.author | Knoll, W. | |
dc.contributor.author | Han, M. | |
dc.contributor.author | Kreiter, M. | |
dc.date.accessioned | 2014-06-17T09:45:03Z | |
dc.date.available | 2014-06-17T09:45:03Z | |
dc.date.issued | 2005-09-19 | |
dc.identifier.citation | Stefani, F.D., Zhong, X., Knoll, W., Han, M., Kreiter, M. (2005-09-19). Memory in quantum-dot photoluminescence blinking. New Journal of Physics 7 : -. ScholarBank@NUS Repository. https://doi.org/10.1088/1367-2630/7/1/197 | |
dc.identifier.issn | 13672630 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/67152 | |
dc.description.abstract | We demonstrate that subsequent on- and off-times of the luminescence blinking of semiconductor quantum dots (QDs) are correlated, indicating that the process behind is not memoryless. A residual memory, which has been overlooked in previous investigations of the blinking, is found to last for several (∼40) detected on/off cycles. No influence of the substrate nature or the excitation intensity is observed, pointing to a process intrinsic to the QDs. These results should encourage re-analysis of existing data and may represent the key to understand the underlying physical mechanism of QD luminescence blinking. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft. | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | BIOENGINEERING | |
dc.contributor.department | MATERIALS SCIENCE | |
dc.description.doi | 10.1088/1367-2630/7/1/197 | |
dc.description.sourcetitle | New Journal of Physics | |
dc.description.volume | 7 | |
dc.description.page | - | |
dc.identifier.isiut | 000231984600001 | |
Appears in Collections: | Staff Publications |
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