Please use this identifier to cite or link to this item: https://doi.org/10.1088/1367-2630/7/1/197
Title: Memory in quantum-dot photoluminescence blinking
Authors: Stefani, F.D.
Zhong, X. 
Knoll, W.
Han, M. 
Kreiter, M.
Issue Date: 19-Sep-2005
Citation: Stefani, F.D., Zhong, X., Knoll, W., Han, M., Kreiter, M. (2005-09-19). Memory in quantum-dot photoluminescence blinking. New Journal of Physics 7 : -. ScholarBank@NUS Repository. https://doi.org/10.1088/1367-2630/7/1/197
Abstract: We demonstrate that subsequent on- and off-times of the luminescence blinking of semiconductor quantum dots (QDs) are correlated, indicating that the process behind is not memoryless. A residual memory, which has been overlooked in previous investigations of the blinking, is found to last for several (∼40) detected on/off cycles. No influence of the substrate nature or the excitation intensity is observed, pointing to a process intrinsic to the QDs. These results should encourage re-analysis of existing data and may represent the key to understand the underlying physical mechanism of QD luminescence blinking. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.
Source Title: New Journal of Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/67152
ISSN: 13672630
DOI: 10.1088/1367-2630/7/1/197
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