Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.2963364
Title: | Complementary metal oxide silicon integrated circuits incorporating monolithically integrated stretchable wavy interconnects | Authors: | Kim, D.-H. Choi, W.M. Ahn, J.-H. Kim, H.-S. Song, J. Huang, Y. Liu, Z. Lu, C. Koh, C.G. Rogers, J.A. |
Issue Date: | 2008 | Citation: | Kim, D.-H., Choi, W.M., Ahn, J.-H., Kim, H.-S., Song, J., Huang, Y., Liu, Z., Lu, C., Koh, C.G., Rogers, J.A. (2008). Complementary metal oxide silicon integrated circuits incorporating monolithically integrated stretchable wavy interconnects. Applied Physics Letters 93 (4) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2963364 | Abstract: | Stretchable complementary metal oxide silicon circuits consisting of ultrathin active devices mechanically and electrically connected by narrow metal lines and polymer bridging structures are presented. This layout-together with designs that locate the neutral mechanical plane near the critical circuit layers-yields strain independent electrical performance and realistic paths to circuit integration. A typical implementation reduces the strain in the silicon to less than ∼0.04% for applied strains of ∼10%. Mechanical and electrical modeling and experimental characterization reveal the underlying physics of these systems. © 2008 American Institute of Physics. | Source Title: | Applied Physics Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/65320 | ISSN: | 00036951 | DOI: | 10.1063/1.2963364 |
Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
SCOPUSTM
Citations
42
checked on Feb 2, 2023
WEB OF SCIENCETM
Citations
34
checked on Feb 2, 2023
Page view(s)
239
checked on Feb 2, 2023
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.