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|Title:||Complementary metal oxide silicon integrated circuits incorporating monolithically integrated stretchable wavy interconnects|
|Citation:||Kim, D.-H., Choi, W.M., Ahn, J.-H., Kim, H.-S., Song, J., Huang, Y., Liu, Z., Lu, C., Koh, C.G., Rogers, J.A. (2008). Complementary metal oxide silicon integrated circuits incorporating monolithically integrated stretchable wavy interconnects. Applied Physics Letters 93 (4) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2963364|
|Abstract:||Stretchable complementary metal oxide silicon circuits consisting of ultrathin active devices mechanically and electrically connected by narrow metal lines and polymer bridging structures are presented. This layout-together with designs that locate the neutral mechanical plane near the critical circuit layers-yields strain independent electrical performance and realistic paths to circuit integration. A typical implementation reduces the strain in the silicon to less than ∼0.04% for applied strains of ∼10%. Mechanical and electrical modeling and experimental characterization reveal the underlying physics of these systems. © 2008 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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