Complementary metal oxide silicon integrated circuits incorporating monolithically integrated stretchable wavy interconnects

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2963364

Title:	Complementary metal oxide silicon integrated circuits incorporating monolithically integrated stretchable wavy interconnects
Authors:	Kim, D.-H. Choi, W.M. Ahn, J.-H. Kim, H.-S. Song, J. Huang, Y. Liu, Z. Lu, C. Koh, C.G. Rogers, J.A.
Issue Date:	2008
Citation:	Kim, D.-H., Choi, W.M., Ahn, J.-H., Kim, H.-S., Song, J., Huang, Y., Liu, Z., Lu, C., Koh, C.G., Rogers, J.A. (2008). Complementary metal oxide silicon integrated circuits incorporating monolithically integrated stretchable wavy interconnects. Applied Physics Letters 93 (4) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2963364
Abstract:	Stretchable complementary metal oxide silicon circuits consisting of ultrathin active devices mechanically and electrically connected by narrow metal lines and polymer bridging structures are presented. This layout-together with designs that locate the neutral mechanical plane near the critical circuit layers-yields strain independent electrical performance and realistic paths to circuit integration. A typical implementation reduces the strain in the silicon to less than ∼0.04% for applied strains of ∼10%. Mechanical and electrical modeling and experimental characterization reveal the underlying physics of these systems. © 2008 American Institute of Physics.
Source Title:	Applied Physics Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/65320
ISSN:	00036951
DOI:	10.1063/1.2963364
Appears in Collections:	Staff Publications

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