Please use this identifier to cite or link to this item:
|Title:||Single contact electron beam induced currents (scebic) in semiconductor junctions. Part I: Quantitative verification of scebic model||Authors:||Kolachina, S.
|Issue Date:||Jun-1998||Citation:||Kolachina, S.,Phang, J.C.H.,Chan, D.S.H. (1998-06). Single contact electron beam induced currents (scebic) in semiconductor junctions. Part I: Quantitative verification of scebic model. Solid-State Electronics 42 (6) : 957-962. ScholarBank@NUS Repository.||Abstract:||Single contact electron beam induced current (SCEBIC) transients have been obtained from a semiconductor junction for varying electron beam currents. The transients are shown to match a previously proposed model that postulates the existence of a parasitic capacitance between the unconnected junction region and the electrostatic ground. An experimental method to quantitatively verify the SCEBIC model and to extract relevant parameters is presented. The limitations of the model are discussed. © 1998 Elsevier Science Ltd. All rights reserved.||Source Title:||Solid-State Electronics||URI:||http://scholarbank.nus.edu.sg/handle/10635/62779||ISSN:||00381101|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Apr 19, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.