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https://doi.org/10.1016/j.tsf.2004.11.183
Title: | Simulation of surface evolution of quantum dot using meshfree approximation | Authors: | Quek, S.S. Liu, G.R. |
Keywords: | Meshfree interpolation Quantum dot Self-assembly Simulation |
Issue Date: | 23-May-2005 | Citation: | Quek, S.S., Liu, G.R. (2005-05-23). Simulation of surface evolution of quantum dot using meshfree approximation. Thin Solid Films 479 (1-2) : 297-309. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2004.11.183 | Abstract: | An ideal way of fabricating quantum dots is by self-assembly that can be simulated using the Stranski-Krastanow growth mode. This paper presents a numerical scheme to simulate the morphology of the quantum dot "island" due to stresses induced by a buried quantum dot. The surface diffusion equation that governs epitaxial growth is solved for the normal surface velocity by using a meshfree interpolation technique-the moving least square method. The normal surface displacement is then deduced and the process is repeated through a difference scheme to obtain the change in surface shape as a function of time. Simulations using the present method have found that the island morphology is affected by various factors including elastic anisotropy, cap layer thickness and crystal orientation. © 2004 Elsevier B.V. All rights reserved. | Source Title: | Thin Solid Films | URI: | http://scholarbank.nus.edu.sg/handle/10635/61308 | ISSN: | 00406090 | DOI: | 10.1016/j.tsf.2004.11.183 |
Appears in Collections: | Staff Publications |
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