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|Title:||Simulation of surface evolution of quantum dot using meshfree approximation|
|Citation:||Quek, S.S., Liu, G.R. (2005-05-23). Simulation of surface evolution of quantum dot using meshfree approximation. Thin Solid Films 479 (1-2) : 297-309. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2004.11.183|
|Abstract:||An ideal way of fabricating quantum dots is by self-assembly that can be simulated using the Stranski-Krastanow growth mode. This paper presents a numerical scheme to simulate the morphology of the quantum dot "island" due to stresses induced by a buried quantum dot. The surface diffusion equation that governs epitaxial growth is solved for the normal surface velocity by using a meshfree interpolation technique-the moving least square method. The normal surface displacement is then deduced and the process is repeated through a difference scheme to obtain the change in surface shape as a function of time. Simulations using the present method have found that the island morphology is affected by various factors including elastic anisotropy, cap layer thickness and crystal orientation. © 2004 Elsevier B.V. All rights reserved.|
|Source Title:||Thin Solid Films|
|Appears in Collections:||Staff Publications|
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