Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2004.11.183
Title: Simulation of surface evolution of quantum dot using meshfree approximation
Authors: Quek, S.S.
Liu, G.R. 
Keywords: Meshfree interpolation
Quantum dot
Self-assembly
Simulation
Issue Date: 23-May-2005
Source: Quek, S.S., Liu, G.R. (2005-05-23). Simulation of surface evolution of quantum dot using meshfree approximation. Thin Solid Films 479 (1-2) : 297-309. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2004.11.183
Abstract: An ideal way of fabricating quantum dots is by self-assembly that can be simulated using the Stranski-Krastanow growth mode. This paper presents a numerical scheme to simulate the morphology of the quantum dot "island" due to stresses induced by a buried quantum dot. The surface diffusion equation that governs epitaxial growth is solved for the normal surface velocity by using a meshfree interpolation technique-the moving least square method. The normal surface displacement is then deduced and the process is repeated through a difference scheme to obtain the change in surface shape as a function of time. Simulations using the present method have found that the island morphology is affected by various factors including elastic anisotropy, cap layer thickness and crystal orientation. © 2004 Elsevier B.V. All rights reserved.
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/61308
ISSN: 00406090
DOI: 10.1016/j.tsf.2004.11.183
Appears in Collections:Staff Publications

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