Current inhomogeneity effect in single-layer ferromagnetic antirectangular structures

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1828608

Title:	Current inhomogeneity effect in single-layer ferromagnetic antirectangular structures
Authors:	Wang, C.C. Adeyeye, A.O. Wu, Y.H. Jalil, M.B.A.
Issue Date:	15-Jan-2005
Citation:	Wang, C.C., Adeyeye, A.O., Wu, Y.H., Jalil, M.B.A. (2005-01-15). Current inhomogeneity effect in single-layer ferromagnetic antirectangular structures. Journal of Applied Physics 97 (2) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1828608
Abstract:	The magnetotransport properties of antirectangular arrays (2×10 μ m2) embedded into 200-Å -thick continuous Ni80 Fe20 films with the interhole spacing equal to 2 μm have been investigated. We observed that the inhomogeneous current-density distribution, due to the placement of electrical contacts, caused an unusual positive magnetoresistance (MR) behavior for the in-plane longitudinal measurements. Finite element simulations on current-density distribution are in agreement with experimental data on small area antirectangular structures. For the continuous film, however, the current-density distribution does not play a significant role in determining the shape of the MR curve. © 2005 American Institute of Physics.
Source Title:	Journal of Applied Physics
URI:	http://scholarbank.nus.edu.sg/handle/10635/55482
ISSN:	00218979
DOI:	10.1063/1.1828608
Appears in Collections:	Staff Publications

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