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|Title:||Bias current effects on the magnetoresistance of a ferromagnetic- semiconductor-ferromagnetic trilayer||Authors:||Bala Kumar, S.
|Issue Date:||2007||Citation:||Bala Kumar, S., Tan, S.G., Jalil, M.B.A. (2007). Bias current effects on the magnetoresistance of a ferromagnetic- semiconductor-ferromagnetic trilayer. Applied Physics Letters 90 (14) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2719156||Abstract:||The authors apply a self-consistent ballistic-diffusive theoretical model to study the bias current j effect on the magnetoresistance of a ferromagnet (FM)-semiconductor (SC)-FM trilayer, with SC highly doped (n++). The interfacial resistance becomes a dynamic parameter and its decrease with increasing j would be responsible for the decrease of magnetoresistance (MR) with j. The underlying physics of this model is based on a self-consistent treatment between the spin drift diffusion transport of electrons in the bulk and ballistic transmission at the interfaces. This model applies qualitatively to the more common FM-nonmagnetic-FM, metal-based current-perpendicular-to-plane spin valve, which has shown experimentally observed decline of MR with j. © 2007 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/55200||ISSN:||00036951||DOI:||10.1063/1.2719156|
|Appears in Collections:||Staff Publications|
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