Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2719156
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dc.titleBias current effects on the magnetoresistance of a ferromagnetic- semiconductor-ferromagnetic trilayer
dc.contributor.authorBala Kumar, S.
dc.contributor.authorTan, S.G.
dc.contributor.authorJalil, M.B.A.
dc.date.accessioned2014-06-17T02:40:21Z
dc.date.available2014-06-17T02:40:21Z
dc.date.issued2007
dc.identifier.citationBala Kumar, S., Tan, S.G., Jalil, M.B.A. (2007). Bias current effects on the magnetoresistance of a ferromagnetic- semiconductor-ferromagnetic trilayer. Applied Physics Letters 90 (14) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2719156
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/55200
dc.description.abstractThe authors apply a self-consistent ballistic-diffusive theoretical model to study the bias current j effect on the magnetoresistance of a ferromagnet (FM)-semiconductor (SC)-FM trilayer, with SC highly doped (n++). The interfacial resistance becomes a dynamic parameter and its decrease with increasing j would be responsible for the decrease of magnetoresistance (MR) with j. The underlying physics of this model is based on a self-consistent treatment between the spin drift diffusion transport of electrons in the bulk and ballistic transmission at the interfaces. This model applies qualitatively to the more common FM-nonmagnetic-FM, metal-based current-perpendicular-to-plane spin valve, which has shown experimentally observed decline of MR with j. © 2007 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2719156
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.2719156
dc.description.sourcetitleApplied Physics Letters
dc.description.volume90
dc.description.issue14
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000245512200034
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