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|Title:||A fast and practical approach to the determination of junction temperature and thermal resistance for BJT/HBT devices||Authors:||Ooi, B.L.
|Issue Date:||20-Dec-2002||Citation:||Ooi, B.L., Chen, B., Lin, F., Kooi, P.S., Hui, C.S. (2002-12-20). A fast and practical approach to the determination of junction temperature and thermal resistance for BJT/HBT devices. Microwave and Optical Technology Letters 35 (6) : 499-502. ScholarBank@NUS Repository. https://doi.org/10.1002/mop.10648||Abstract:||A simple, robust, accurate method to extract the thermal resistance of BJT/HBT devices is proposed, which only needs the measured device DC I-V characteristics at room temperature. No optimization is needed to extract the thermal resistance. The proposed method is verified using a variety of BJT/HBT devices. Compared to the measured results taken from both CW DC measurements and isothermal measurements, the extracted values using our method is in excellent agreement with the conventional method.||Source Title:||Microwave and Optical Technology Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/54127||ISSN:||08952477||DOI:||10.1002/mop.10648|
|Appears in Collections:||Staff Publications|
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