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https://doi.org/10.1002/mop.10648
| Title: | A fast and practical approach to the determination of junction temperature and thermal resistance for BJT/HBT devices | Authors: | Ooi, B.L. Chen, B. Lin, F. Kooi, P.S. Hui, C.S. |
Keywords: | Bipolar transistor HBT Parameter extraction Thermal resistance |
Issue Date: | 20-Dec-2002 | Citation: | Ooi, B.L., Chen, B., Lin, F., Kooi, P.S., Hui, C.S. (2002-12-20). A fast and practical approach to the determination of junction temperature and thermal resistance for BJT/HBT devices. Microwave and Optical Technology Letters 35 (6) : 499-502. ScholarBank@NUS Repository. https://doi.org/10.1002/mop.10648 | Abstract: | A simple, robust, accurate method to extract the thermal resistance of BJT/HBT devices is proposed, which only needs the measured device DC I-V characteristics at room temperature. No optimization is needed to extract the thermal resistance. The proposed method is verified using a variety of BJT/HBT devices. Compared to the measured results taken from both CW DC measurements and isothermal measurements, the extracted values using our method is in excellent agreement with the conventional method. | Source Title: | Microwave and Optical Technology Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/54127 | ISSN: | 08952477 | DOI: | 10.1002/mop.10648 |
| Appears in Collections: | Staff Publications |
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