Please use this identifier to cite or link to this item: https://doi.org/10.1002/mop.10648
Title: A fast and practical approach to the determination of junction temperature and thermal resistance for BJT/HBT devices
Authors: Ooi, B.L. 
Chen, B. 
Lin, F. 
Kooi, P.S. 
Hui, C.S. 
Keywords: Bipolar transistor
HBT
Parameter extraction
Thermal resistance
Issue Date: 20-Dec-2002
Source: Ooi, B.L., Chen, B., Lin, F., Kooi, P.S., Hui, C.S. (2002-12-20). A fast and practical approach to the determination of junction temperature and thermal resistance for BJT/HBT devices. Microwave and Optical Technology Letters 35 (6) : 499-502. ScholarBank@NUS Repository. https://doi.org/10.1002/mop.10648
Abstract: A simple, robust, accurate method to extract the thermal resistance of BJT/HBT devices is proposed, which only needs the measured device DC I-V characteristics at room temperature. No optimization is needed to extract the thermal resistance. The proposed method is verified using a variety of BJT/HBT devices. Compared to the measured results taken from both CW DC measurements and isothermal measurements, the extracted values using our method is in excellent agreement with the conventional method.
Source Title: Microwave and Optical Technology Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/54127
ISSN: 08952477
DOI: 10.1002/mop.10648
Appears in Collections:Staff Publications

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