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https://doi.org/10.1002/mop.24330
| Title: | A "thru-short" method for noise de-embedding of mosfets | Authors: | Nan, L. Xiong, Y.-Z. Mouthaan, K. Issaoun, A. Shi, J. Ooi, B.-L. |
Keywords: | De-embedding MOSFET Noise parameters |
Issue Date: | May-2009 | Citation: | Nan, L., Xiong, Y.-Z., Mouthaan, K., Issaoun, A., Shi, J., Ooi, B.-L. (2009-05). A "thru-short" method for noise de-embedding of mosfets. Microwave and Optical Technology Letters 51 (5) : 1379-1382. ScholarBank@NUS Repository. https://doi.org/10.1002/mop.24330 | Abstract: | A "thru-short" noise de-embedding method for MOSFETs is presented. The capability of the "thru-short" method has been validated through a comparison of measured and de-embedded noise parameters using different methods. It is shown that the "thru-short" method is reliable for on-wafer de-embedding of both S-parameters and noise parameters up to 18 GHz. Noise contributions from the parasitics due to the contact pads and interconnections surrounding the MOSFET can be determined and removed accurately. © 2009 Wiley Periodicals, Inc. | Source Title: | Microwave and Optical Technology Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/53878 | ISSN: | 08952477 | DOI: | 10.1002/mop.24330 |
| Appears in Collections: | Staff Publications |
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