Please use this identifier to cite or link to this item: https://doi.org/10.1002/mop.24330
Title: A "thru-short" method for noise de-embedding of mosfets
Authors: Nan, L.
Xiong, Y.-Z.
Mouthaan, K. 
Issaoun, A.
Shi, J.
Ooi, B.-L. 
Keywords: De-embedding
MOSFET
Noise parameters
Issue Date: May-2009
Source: Nan, L., Xiong, Y.-Z., Mouthaan, K., Issaoun, A., Shi, J., Ooi, B.-L. (2009-05). A "thru-short" method for noise de-embedding of mosfets. Microwave and Optical Technology Letters 51 (5) : 1379-1382. ScholarBank@NUS Repository. https://doi.org/10.1002/mop.24330
Abstract: A "thru-short" noise de-embedding method for MOSFETs is presented. The capability of the "thru-short" method has been validated through a comparison of measured and de-embedded noise parameters using different methods. It is shown that the "thru-short" method is reliable for on-wafer de-embedding of both S-parameters and noise parameters up to 18 GHz. Noise contributions from the parasitics due to the contact pads and interconnections surrounding the MOSFET can be determined and removed accurately. © 2009 Wiley Periodicals, Inc.
Source Title: Microwave and Optical Technology Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/53878
ISSN: 08952477
DOI: 10.1002/mop.24330
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