Please use this identifier to cite or link to this item: https://doi.org/10.1002/mop.24330
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dc.titleA "thru-short" method for noise de-embedding of mosfets
dc.contributor.authorNan, L.
dc.contributor.authorXiong, Y.-Z.
dc.contributor.authorMouthaan, K.
dc.contributor.authorIssaoun, A.
dc.contributor.authorShi, J.
dc.contributor.authorOoi, B.-L.
dc.date.accessioned2014-06-16T09:23:07Z
dc.date.available2014-06-16T09:23:07Z
dc.date.issued2009-05
dc.identifier.citationNan, L., Xiong, Y.-Z., Mouthaan, K., Issaoun, A., Shi, J., Ooi, B.-L. (2009-05). A "thru-short" method for noise de-embedding of mosfets. Microwave and Optical Technology Letters 51 (5) : 1379-1382. ScholarBank@NUS Repository. https://doi.org/10.1002/mop.24330
dc.identifier.issn08952477
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/53878
dc.description.abstractA "thru-short" noise de-embedding method for MOSFETs is presented. The capability of the "thru-short" method has been validated through a comparison of measured and de-embedded noise parameters using different methods. It is shown that the "thru-short" method is reliable for on-wafer de-embedding of both S-parameters and noise parameters up to 18 GHz. Noise contributions from the parasitics due to the contact pads and interconnections surrounding the MOSFET can be determined and removed accurately. © 2009 Wiley Periodicals, Inc.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1002/mop.24330
dc.sourceScopus
dc.subjectDe-embedding
dc.subjectMOSFET
dc.subjectNoise parameters
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1002/mop.24330
dc.description.sourcetitleMicrowave and Optical Technology Letters
dc.description.volume51
dc.description.issue5
dc.description.page1379-1382
dc.description.codenMOTLE
dc.identifier.isiut000265248700067
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