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https://doi.org/10.1002/adma.201004519
| Title: | Mutual ferromagnetic-ferroelectric coupling in multiferroic copper-doped ZnO | Authors: | Herng, T.S. Wong, M.F. Qi, D. Yi, J. Kumar, A. Huang, A. Kartawidjaja, F.C. Smadici, S. Abbamonte, P. Sánchez-Hanke, C. Shannigrahi, S. Xue, J.M. Wang, J. Feng, Y.P. Rusydi, A. Zeng, K. Ding, J. |
Keywords: | ferroelectric materials magnetic materials multiferroic materials thin films zinc oxide |
Issue Date: | 12-Apr-2011 | Citation: | Herng, T.S., Wong, M.F., Qi, D., Yi, J., Kumar, A., Huang, A., Kartawidjaja, F.C., Smadici, S., Abbamonte, P., Sánchez-Hanke, C., Shannigrahi, S., Xue, J.M., Wang, J., Feng, Y.P., Rusydi, A., Zeng, K., Ding, J. (2011-04-12). Mutual ferromagnetic-ferroelectric coupling in multiferroic copper-doped ZnO. Advanced Materials 23 (14) : 1635-1640. ScholarBank@NUS Repository. https://doi.org/10.1002/adma.201004519 | Abstract: | A mutual ferromagnetic and ferroelectric coupling (multiferroic behavior) in Cu-doped ZnO is demonstrated via deterministic control of Cu doping and defect engineering. The coexistence of multivalence Cu ions and oxygen vacancies is important to multiferroic behaviors in ZnO:Cu. The samples show clear ferroelectric and ferromagnetic domain patterns. These domain structures may be written reversibly via electric and magnetic bias. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. | Source Title: | Advanced Materials | URI: | http://scholarbank.nus.edu.sg/handle/10635/51471 | ISSN: | 09359648 | DOI: | 10.1002/adma.201004519 |
| Appears in Collections: | Staff Publications |
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