Please use this identifier to cite or link to this item: https://doi.org/10.1002/adma.201004519
Title: Mutual ferromagnetic-ferroelectric coupling in multiferroic copper-doped ZnO
Authors: Herng, T.S. 
Wong, M.F.
Qi, D. 
Yi, J. 
Kumar, A.
Huang, A.
Kartawidjaja, F.C. 
Smadici, S.
Abbamonte, P.
Sánchez-Hanke, C.
Shannigrahi, S.
Xue, J.M. 
Wang, J. 
Feng, Y.P. 
Rusydi, A. 
Zeng, K. 
Ding, J. 
Keywords: ferroelectric materials
magnetic materials
multiferroic materials
thin films
zinc oxide
Issue Date: 12-Apr-2011
Citation: Herng, T.S., Wong, M.F., Qi, D., Yi, J., Kumar, A., Huang, A., Kartawidjaja, F.C., Smadici, S., Abbamonte, P., Sánchez-Hanke, C., Shannigrahi, S., Xue, J.M., Wang, J., Feng, Y.P., Rusydi, A., Zeng, K., Ding, J. (2011-04-12). Mutual ferromagnetic-ferroelectric coupling in multiferroic copper-doped ZnO. Advanced Materials 23 (14) : 1635-1640. ScholarBank@NUS Repository. https://doi.org/10.1002/adma.201004519
Abstract: A mutual ferromagnetic and ferroelectric coupling (multiferroic behavior) in Cu-doped ZnO is demonstrated via deterministic control of Cu doping and defect engineering. The coexistence of multivalence Cu ions and oxygen vacancies is important to multiferroic behaviors in ZnO:Cu. The samples show clear ferroelectric and ferromagnetic domain patterns. These domain structures may be written reversibly via electric and magnetic bias. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Source Title: Advanced Materials
URI: http://scholarbank.nus.edu.sg/handle/10635/51471
ISSN: 09359648
DOI: 10.1002/adma.201004519
Appears in Collections:Staff Publications

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