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|Title:||Multi-channel spintronic transistor design based on magnetoelectric barriers and spin-orbital effects||Authors:||Fujita, T.
|Issue Date:||30-Jan-2008||Citation:||Fujita, T., Jalil, M.B.A., Tan, S.G. (2008-01-30). Multi-channel spintronic transistor design based on magnetoelectric barriers and spin-orbital effects. Journal of Physics Condensed Matter 20 (4) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-8984/20/04/045205||Abstract:||We present a spin transistor design based on spin-orbital interactions in a two-dimensional electron gas, with magnetic barriers induced by a patterned ferromagnetic gate. The proposed device overcomes certain shortcomings of previous spin transistor designs such as long device length and degradation of conductance modulation for multi-channel transport. The robustness of our device for multi-channel transport is unique in spin transistor designs based on spin-orbit coupling. The device is more practical in fabrication and experimental respects compared to previously conceived single-mode spin transistors. © IOP Publishing Ltd.||Source Title:||Journal of Physics Condensed Matter||URI:||http://scholarbank.nus.edu.sg/handle/10635/50985||ISSN:||09538984||DOI:||10.1088/0953-8984/20/04/045205|
|Appears in Collections:||Staff Publications|
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