Please use this identifier to cite or link to this item: https://doi.org/04/045205
Title: Multi-channel spintronic transistor design based on magnetoelectric barriers and spin-orbital effects
Authors: Fujita, T. 
Jalil, M.B.A. 
Tan, S.G. 
Issue Date: 30-Jan-2008
Source: Fujita, T., Jalil, M.B.A., Tan, S.G. (2008-01-30). Multi-channel spintronic transistor design based on magnetoelectric barriers and spin-orbital effects. Journal of Physics Condensed Matter 20 (4) : -. ScholarBank@NUS Repository. https://doi.org/04/045205
Abstract: We present a spin transistor design based on spin-orbital interactions in a two-dimensional electron gas, with magnetic barriers induced by a patterned ferromagnetic gate. The proposed device overcomes certain shortcomings of previous spin transistor designs such as long device length and degradation of conductance modulation for multi-channel transport. The robustness of our device for multi-channel transport is unique in spin transistor designs based on spin-orbit coupling. The device is more practical in fabrication and experimental respects compared to previously conceived single-mode spin transistors. © IOP Publishing Ltd.
Source Title: Journal of Physics Condensed Matter
URI: http://scholarbank.nus.edu.sg/handle/10635/50985
ISSN: 09538984
DOI: 04/045205
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