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Title: Anomalous resistive switching in memristors based on two-dimensional palladium diselenide using heterophase grain boundaries
Authors: Yesheng Li 
Leyi Loh 
Sifan Li 
Li Chen 
Bochang Li 
Michel Bosman 
Kah Wee Ang 
Keywords: uniform switching
artifical synapse
Issue Date: 17-May-2021
Publisher: Springer Nature
Citation: Yesheng Li, Leyi Loh, Sifan Li, Li Chen, Bochang Li, Michel Bosman, Kah Wee Ang (2021-05-17). Anomalous resistive switching in memristors based on two-dimensional palladium diselenide using heterophase grain boundaries. Nature Electronics 4 (5) : 348-356. ScholarBank@NUS Repository.
Abstract: The implementation of memristive synapses in neuromorphic computing is hindered by the limited reproducibility and high energy consumption of the switching behaviour of the devices. Typical filament-type memristors suffer, in particular, from temporal and spatial variation in the set voltage and resistance states due to stochastic filament formation. Here, we report memristors based on two-dimensional pentagonal palladium diselenide (PdSe2) that can exhibit anomalous resistive switching behaviour with two interchangeable reset modes: total reset and quasi-reset. Heterophase grain boundaries are formed in the PdSe2 via local phase transitions induced by electron-beam irradiation, which leads to residual filaments along the grain boundaries that can guide the formation of conductive filaments. When operated in the quasi-reset mode, the memristors show a sixfold improvement in switching variation compared with devices operating in the total-reset mode, as well as a low set voltage (0.6 V), long retention times and programmable multilevel resistance states. We also show that the devices can emulate synaptic plasticity and that multipattern memorization can be implemented using a crossbar array architecture.
Source Title: Nature Electronics
ISSN: 2520-1131
Appears in Collections:Staff Publications

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