Please use this identifier to cite or link to this item:
https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185261
| Title: | ECC-Less Multi-Level SRAM Physically Unclonable Function and 127% PUF-to-Memory Capacity Ratio with No Bitcell Modification in 28nm | Authors: | Joydeep Basu Sachin Taneja Viveka Konandur Rajanna Tianqi Wang Massimo Bruno Alioto |
Issue Date: | 11-Jun-2023 | Citation: | Joydeep Basu, Sachin Taneja, Viveka Konandur Rajanna, Tianqi Wang, Massimo Bruno Alioto (2023-06-11). ECC-Less Multi-Level SRAM Physically Unclonable Function and 127% PUF-to-Memory Capacity Ratio with No Bitcell Modification in 28nm. 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits). ScholarBank@NUS Repository. https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185261 | Rights: | CC0 1.0 Universal | Source Title: | 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) | URI: | https://scholarbank.nus.edu.sg/handle/10635/244206 | ISBN: | 978-4-86348-806-9 979-8-3503-4669-5 |
DOI: | 10.23919/VLSITechnologyandCir57934.2023.10185261 | Rights: | CC0 1.0 Universal |
| Appears in Collections: | Elements Staff Publications |
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