Please use this identifier to cite or link to this item:
Title: Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers
Authors: Wang, Qianqian
Cao, Liemao
Liang, Shi-Jun
Wu, Weikang
Wang, Guangzhao
Lee, Ching Hua 
Ong, Wee Liat
Yang, Hui Ying
Ang, Lay Kee
Yang, Shengyuan A.
Ang, Yee Sin
Issue Date: 4-Aug-2021
Publisher: Nature Research
Citation: Wang, Qianqian, Cao, Liemao, Liang, Shi-Jun, Wu, Weikang, Wang, Guangzhao, Lee, Ching Hua, Ong, Wee Liat, Yang, Hui Ying, Ang, Lay Kee, Yang, Shengyuan A., Ang, Yee Sin (2021-08-04). Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers. npj 2D Materials and Applications 5 (1) : 71. ScholarBank@NUS Repository.
Rights: Attribution 4.0 International
Abstract: Metal contacts to two-dimensional (2D) semiconductors are often plagued by the strong Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height (SBH) and degrades the performance of 2D semiconductor devices. Here, we show that MoSi2N4 and WSi2N4 monolayers—an emerging 2D semiconductor family with exceptional physical properties—exhibit strongly suppressed FLP and wide-range tunable SBH. An exceptionally large SBH slope parameter of S ? 0.7 is obtained which outperforms the vast majority of other 2D semiconductors. Such intriguing behavior arises from the septuple-layered morphology of MoSi2N4 and WSi2N4 monolayers in which the semiconducting electronic states are protected by the outlying Si–N sublayer. We identify Ti, Sc, and Ni as highly efficient Ohmic contacts to MoSi2N4 and WSi2N4 with zero interface tunneling barrier. Our findings reveal the potential of MoSi2N4 and WSi2N4 as a practical platform for designing high-performance and energy-efficient 2D semiconductor electronic devices. © 2021, The Author(s).
Source Title: npj 2D Materials and Applications
ISSN: 2397-7132
DOI: 10.1038/s41699-021-00251-y
Rights: Attribution 4.0 International
Appears in Collections:Elements
Staff Publications

Show full item record
Files in This Item:
File Description SizeFormatAccess SettingsVersion 
10_1038_s41699-021-00251-y.pdf3.36 MBAdobe PDF



Google ScholarTM



This item is licensed under a Creative Commons License Creative Commons