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|Title:||Mid-infrared modulators integrating silicon and black phosphorus photonics||Authors:||Huang, L.
Yu, Z. G.
|Issue Date:||1-Dec-2021||Publisher:||Elsevier Ltd||Citation:||Huang, L., Dong, B., Yu, Z. G., Zhou, J., Ma, Y., Zhang, Y-W, Lee, C., Ang, K-W (2021-12-01). Mid-infrared modulators integrating silicon and black phosphorus photonics. Materials Today Advances 12 : 100170. ScholarBank@NUS Repository. https://doi.org/10.1016/j.mtadv.2021.100170||Rights:||Attribution-NonCommercial-NoDerivatives 4.0 International||Abstract:||Vast applications of mid-infrared await the realisation of integrated photonic systems for this unique spectrum. Despite its potential as a universal platform for diverse active functions in mid-infrared, black phosphorus (BP) photonics still lacks integrated modulators for completion. Here we realize a hybrid integration of mid-infrared BP modulator on silicon photonics waveguide. Through gating effect, the anisotropic absorption in armchair BP can be tuned for enabling efficient optical modulation spanning ∼3.85–4.1 μm. The integrated waveguide design further promotes light–BP interaction that achieves a modulation depth of ∼5 dB at a low bias of −4 V. Additionally, the active footprint of 225 μm2 and the switching energy of ∼2.6 pJ are remarkably smaller compared to traditional counterparts. Function diversity of such a platform is further verified by integrating BP photodetector and modulator. The combination of two-dimensional materials and silicon photonics manifests a versatile platform to realise high-performance optoelectronic devices for compact on-chip mid-infrared system. © 2021 The Author(s)||Source Title:||Materials Today Advances||URI:||https://scholarbank.nus.edu.sg/handle/10635/231914||ISSN:||2590-0498||DOI:||10.1016/j.mtadv.2021.100170||Rights:||Attribution-NonCommercial-NoDerivatives 4.0 International|
|Appears in Collections:||Staff Publications|
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