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https://doi.org/10.1038/s41467-021-26230-x
Title: | Wafer-scale functional circuits based on two dimensional semiconductors with fabrication optimized by machine learning | Authors: | Chen, Xinyu Xie, Yufeng Sheng, Yaochen Tang, Hongwei Wang, Zeming Wang, Yu Wang, Yin Liao, Fuyou Ma, Jingyi Guo, Xiaojiao Tong, Ling Liu, Hanqi Liu, Hao Wu, Tianxiang Cao, Jiaxin Bu, Sitong Shen, Hui Bai, Fuyu Huang, Daming Deng, Jianan Riaud, Antoine Xu, Zihan Wu, Chenjian Xing, Shiwei Lu, Ye Ma, Shunli Sun, Zhengzong Xue, Zhongyin Di, Zengfeng Gong, Xiao Zhang, David Wei Zhou, Peng Wan, Jing Bao, Wenzhong |
Issue Date: | 12-Oct-2021 | Publisher: | Nature Research | Citation: | Chen, Xinyu, Xie, Yufeng, Sheng, Yaochen, Tang, Hongwei, Wang, Zeming, Wang, Yu, Wang, Yin, Liao, Fuyou, Ma, Jingyi, Guo, Xiaojiao, Tong, Ling, Liu, Hanqi, Liu, Hao, Wu, Tianxiang, Cao, Jiaxin, Bu, Sitong, Shen, Hui, Bai, Fuyu, Huang, Daming, Deng, Jianan, Riaud, Antoine, Xu, Zihan, Wu, Chenjian, Xing, Shiwei, Lu, Ye, Ma, Shunli, Sun, Zhengzong, Xue, Zhongyin, Di, Zengfeng, Gong, Xiao, Zhang, David Wei, Zhou, Peng, Wan, Jing, Bao, Wenzhong (2021-10-12). Wafer-scale functional circuits based on two dimensional semiconductors with fabrication optimized by machine learning. Nature Communications 12 (1) : 5953. ScholarBank@NUS Repository. https://doi.org/10.1038/s41467-021-26230-x | Rights: | Attribution 4.0 International | Abstract: | Triggered by the pioneering research on graphene, the family of two-dimensional layered materials (2DLMs) has been investigated for more than a decade, and appealing functionalities have been demonstrated. However, there are still challenges inhibiting high-quality growth and circuit-level integration, and results from previous studies are still far from complying with industrial standards. Here, we overcome these challenges by utilizing machine-learning (ML) algorithms to evaluate key process parameters that impact the electrical characteristics of MoS2 top-gated field-effect transistors (FETs). The wafer-scale fabrication processes are then guided by ML combined with grid searching to co-optimize device performance, including mobility, threshold voltage and subthreshold swing. A 62-level SPICE modeling was implemented for MoS2 FETs and further used to construct functional digital, analog, and photodetection circuits. Finally, we present wafer-scale test FET arrays and a 4-bit full adder employing industry-standard design flows and processes. Taken together, these results experimentally validate the application potential of ML-assisted fabrication optimization for beyond-silicon electronic materials. © 2021, The Author(s). | Source Title: | Nature Communications | URI: | https://scholarbank.nus.edu.sg/handle/10635/231909 | ISSN: | 2041-1723 | DOI: | 10.1038/s41467-021-26230-x | Rights: | Attribution 4.0 International |
Appears in Collections: | Elements Staff Publications |
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