Please use this identifier to cite or link to this item: https://doi.org/10.1126/sciadv.abi8481
Title: Dissipation-enabled hydrodynamic conductivity in a tunable bandgap semiconductor
Authors: Tan, C
Ho, DYH
Wang, L
Li, JIA
Yudhistira, I 
Rhodes, DA
Taniguchi, T
Watanabe, K
Shepard, K
McEuen, PL
Dean, CR
Adam, S 
Hone, J
Issue Date: 1-Apr-2022
Publisher: American Association for the Advancement of Science (AAAS)
Citation: Tan, C, Ho, DYH, Wang, L, Li, JIA, Yudhistira, I, Rhodes, DA, Taniguchi, T, Watanabe, K, Shepard, K, McEuen, PL, Dean, CR, Adam, S, Hone, J (2022-04-01). Dissipation-enabled hydrodynamic conductivity in a tunable bandgap semiconductor. Science Advances 8 (15) : eabi8481-. ScholarBank@NUS Repository. https://doi.org/10.1126/sciadv.abi8481
Abstract: Electronic transport in the regime where carrier-carrier collisions are the dominant scattering mechanism has taken on new relevance with the advent of ultraclean two-dimensional materials. Here, we present a combined theoretical and experimental study of ambipolar hydrodynamic transport in bilayer graphene demonstrating that the conductivity is given by the sum of two Drude-like terms that describe relative motion between electrons and holes, and the collective motion of the electron-hole plasma. As predicted, the measured conductivity of gapless, charge-neutral bilayer graphene is sample- and temperature-independent over a wide range. Away from neutrality, the electron-hole conductivity collapses to a single curve, and a set of just four fitting parameters provides quantitative agreement between theory and experiment at all densities, temperatures, and gaps measured. This work validates recent theories for dissipation-enabled hydrodynamic conductivity and creates a link between semiconductor physics and the emerging field of viscous electronics.
Source Title: Science Advances
URI: https://scholarbank.nus.edu.sg/handle/10635/226724
ISSN: 23752548
23752548
DOI: 10.1126/sciadv.abi8481
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