Please use this identifier to cite or link to this item:
https://doi.org/10.1126/sciadv.abi8481
DC Field | Value | |
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dc.title | Dissipation-enabled hydrodynamic conductivity in a tunable bandgap semiconductor | |
dc.contributor.author | Tan, C | |
dc.contributor.author | Ho, DYH | |
dc.contributor.author | Wang, L | |
dc.contributor.author | Li, JIA | |
dc.contributor.author | Yudhistira, I | |
dc.contributor.author | Rhodes, DA | |
dc.contributor.author | Taniguchi, T | |
dc.contributor.author | Watanabe, K | |
dc.contributor.author | Shepard, K | |
dc.contributor.author | McEuen, PL | |
dc.contributor.author | Dean, CR | |
dc.contributor.author | Adam, S | |
dc.contributor.author | Hone, J | |
dc.date.accessioned | 2022-06-08T06:10:52Z | |
dc.date.available | 2022-06-08T06:10:52Z | |
dc.date.issued | 2022-04-01 | |
dc.identifier.citation | Tan, C, Ho, DYH, Wang, L, Li, JIA, Yudhistira, I, Rhodes, DA, Taniguchi, T, Watanabe, K, Shepard, K, McEuen, PL, Dean, CR, Adam, S, Hone, J (2022-04-01). Dissipation-enabled hydrodynamic conductivity in a tunable bandgap semiconductor. Science Advances 8 (15) : eabi8481-. ScholarBank@NUS Repository. https://doi.org/10.1126/sciadv.abi8481 | |
dc.identifier.issn | 23752548 | |
dc.identifier.issn | 23752548 | |
dc.identifier.uri | https://scholarbank.nus.edu.sg/handle/10635/226724 | |
dc.description.abstract | Electronic transport in the regime where carrier-carrier collisions are the dominant scattering mechanism has taken on new relevance with the advent of ultraclean two-dimensional materials. Here, we present a combined theoretical and experimental study of ambipolar hydrodynamic transport in bilayer graphene demonstrating that the conductivity is given by the sum of two Drude-like terms that describe relative motion between electrons and holes, and the collective motion of the electron-hole plasma. As predicted, the measured conductivity of gapless, charge-neutral bilayer graphene is sample- and temperature-independent over a wide range. Away from neutrality, the electron-hole conductivity collapses to a single curve, and a set of just four fitting parameters provides quantitative agreement between theory and experiment at all densities, temperatures, and gaps measured. This work validates recent theories for dissipation-enabled hydrodynamic conductivity and creates a link between semiconductor physics and the emerging field of viscous electronics. | |
dc.publisher | American Association for the Advancement of Science (AAAS) | |
dc.source | Elements | |
dc.type | Article | |
dc.date.updated | 2022-06-08T02:00:32Z | |
dc.contributor.department | MATERIALS SCIENCE AND ENGINEERING | |
dc.description.doi | 10.1126/sciadv.abi8481 | |
dc.description.sourcetitle | Science Advances | |
dc.description.volume | 8 | |
dc.description.issue | 15 | |
dc.description.page | eabi8481- | |
dc.published.state | Published | |
Appears in Collections: | Elements Staff Publications |
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Dissipation-enabled hydrodynamic conductivity in a tunable bandgap semiconductor.pdf | Published version | 598.06 kB | Adobe PDF | OPEN | Published | View/Download |
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