Device parameter extraction for loss analysis of silicon solar cells based on intelligent model fitting

Abstract

A fully automated and rigorous loss analysis routine that provides a breakdown of the loss components occurring in silicon solar cells is presented in this work. The routine combines large-area two-dimensional modeling and smart auto-fitting routines with luminescence imaging. This allows the spatially resolved information in luminescence images to be analyzed to extract recombination parameters partitioned by regions (e.g. wafer edge, under metal contacts, over passivated areas), as well as the spatial distribution of contact resistance. After these cell parameters have been extracted, a loss analysis of open-circuit voltage can be performed by simulating the open-circuit condition and examining the various recombination currents, and a loss analysis of fill factor can be performed by successively turning off the effects of factors that degrade it in simulation. The technique is demonstrated on a multicrystalline silicon PERC solar cell. © 2018 Elsevier Ltd.