Please use this identifier to cite or link to this item: https://doi.org/10.1002/adma.202103907
Title: Gate-Defined Quantum Confinement in CVD 2D WS2
Authors: Lau, Chit Siong
Chee, Jing Yee
Cao, Liemao
Ooi, Zi-En
Tong, Shi Wun 
Bosman, Michel 
Bussolotti, Fabio
Deng, Tianqi
Wu, Gang
Yang, Shuo-Wang
Wang, Tong
Teo, Siew Lang 
Wong, Calvin Pei Yu 
Chai, Jian Wei
Chen, Li
Zhang, Zhong Ming
Ang, Kah-Wee
Ang, Yee Sin
Goh, Kuan Eng Johnson 
Keywords: Science & Technology
Physical Sciences
Technology
Chemistry, Multidisciplinary
Chemistry, Physical
Nanoscience & Nanotechnology
Materials Science, Multidisciplinary
Physics, Applied
Physics, Condensed Matter
Chemistry
Science & Technology - Other Topics
Materials Science
Physics
atomic layer deposition
Coulomb blockade
HfO
(2)
high-
k dielectric
transition metal dichalcogenides
ATOMIC LAYER DEPOSITION
FIELD-EFFECT TRANSISTORS
VAPOR-PHASE GROWTH
MONOLAYER MOS2
VALLEY POLARIZATION
INTERFACE-ROUGHNESS
TRANSITION
PERFORMANCE
TRANSPORT
MOBILITY
Issue Date: 26-Aug-2021
Publisher: WILEY-V C H VERLAG GMBH
Citation: Lau, Chit Siong, Chee, Jing Yee, Cao, Liemao, Ooi, Zi-En, Tong, Shi Wun, Bosman, Michel, Bussolotti, Fabio, Deng, Tianqi, Wu, Gang, Yang, Shuo-Wang, Wang, Tong, Teo, Siew Lang, Wong, Calvin Pei Yu, Chai, Jian Wei, Chen, Li, Zhang, Zhong Ming, Ang, Kah-Wee, Ang, Yee Sin, Goh, Kuan Eng Johnson (2021-08-26). Gate-Defined Quantum Confinement in CVD 2D WS2. ADVANCED MATERIALS. ScholarBank@NUS Repository. https://doi.org/10.1002/adma.202103907
Abstract: Temperature-dependent transport measurements are performed on the same set of chemical vapor deposition (CVD)-grown WS2 single- and bilayer devices before and after atomic layer deposition (ALD) of HfO2. This isolates the influence of HfO2 deposition on low-temperature carrier transport and shows that carrier mobility is not charge impurity limited as commonly thought, but due to another important but commonly overlooked factor: interface roughness. This finding is corroborated by circular dichroic photoluminescence spectroscopy, X-ray photoemission spectroscopy, cross-sectional scanning transmission electron microscopy, carrier-transport modeling, and density functional modeling. Finally, electrostatic gate-defined quantum confinement is demonstrated using a scalable approach of large-area CVD-grown bilayer WS2 and ALD-grown HfO2. The high dielectric constant and low leakage current enabled by HfO2 allows an estimated quantum dot size as small as 58 nm. The ability to lithographically define increasingly smaller devices is especially important for transition metal dichalcogenides due to their large effective masses, and should pave the way toward their use in quantum information processing applications.
Source Title: ADVANCED MATERIALS
URI: https://scholarbank.nus.edu.sg/handle/10635/202310
ISSN: 09359648
15214095
DOI: 10.1002/adma.202103907
Appears in Collections:Staff Publications
Elements

Show full item record
Files in This Item:
File Description SizeFormatAccess SettingsVersion 
AdvMat 2021 Lau Gate-defined Quantum Confinement in CVD 2D WS2.pdfPublished version7.88 MBAdobe PDF

OPEN

NoneView/Download

Page view(s)

33
checked on Nov 18, 2021

Download(s)

1
checked on Nov 18, 2021

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.