Please use this identifier to cite or link to this item: https://doi.org/10.1038/s41528-020-00082-9
Title: Transparent flexible thin-film p–n junction thermoelectric module
Authors: Wang, X.
Suwardi, A. 
Lim, S.L. 
Wei, F.
Xu, J. 
Issue Date: 10-Aug-2020
Publisher: Nature Research
Citation: Wang, X., Suwardi, A., Lim, S.L., Wei, F., Xu, J. (2020-08-10). Transparent flexible thin-film p–n junction thermoelectric module. npj Flexible Electronics 4 (1) : 19. ScholarBank@NUS Repository. https://doi.org/10.1038/s41528-020-00082-9
Rights: Attribution 4.0 International
Abstract: Transparent and flexible thermoelectrics has been highly sought after for future wearable devices. However, the main stumbling block to prevent its widespread adoption is the lack of p-type transparent thermoelectrics and the stringent criteria of electrical and thermal properties matching appropriately between p-legs and n-legs. This work demonstrates the fabrication of p-type PEDOT:PSS films whose optical properties, electrical conductivity, thermal conductivity, and Seebeck coefficient were engineered to perfectly match the n-type indium tin oxide (ITO) counterparts. The dense p-type PEDOT:PSS and n-type ITO thin films show a thermoelectric figure of merit of zT = 0.30 and 0.29 at 450 K, and a thermal conductivity of 0.22 and 0.32 W m−1 K−1, respectively. A flexible thermoelectric generator (TEG) module with a high transmittance of >81% in the visible wavelength range of 400–800 nm is fabricated using 10 pairs of p-type PEDOT:PSS and n-type ITO thin film legs. An ultra-high power density of 22.2 W m−2 at a temperature gradient of 80 K was observed, which is the highest power density reported for organic/hybrid-based flexible TEGs so far. Our transparent flexible thin-film p–n junction thermoelectric module with exceptionally high power generation may take a tremendous step forward towards multi-functional wearable devices. © 2020, The Author(s).
Source Title: npj Flexible Electronics
URI: https://scholarbank.nus.edu.sg/handle/10635/198717
ISSN: 23974621
DOI: 10.1038/s41528-020-00082-9
Rights: Attribution 4.0 International
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