Please use this identifier to cite or link to this item: https://doi.org/10.1021/acs.nanolett.1c01439
Title: Impurity-Induced Emission in Re-Doped WS2 Monolayers
Authors: Loh, Leyi
Chen, Yifeng 
Wang, Junyong 
Yin, Xinmao 
Tang, Chi Sin
Zhang, Qi
Watanabe, Kenji
Taniguchi, Takashi
Wee, Andrew TS
Bosman, Michel
Quek, Su Ying 
Eda, Goki 
Keywords: Impurities
Excitons
Monolayers
Defects
Doping
Issue Date: 23-Jun-2021
Publisher: AMER CHEMICAL SOC
Citation: Loh, Leyi, Chen, Yifeng, Wang, Junyong, Yin, Xinmao, Tang, Chi Sin, Zhang, Qi, Watanabe, Kenji, Taniguchi, Takashi, Wee, Andrew TS, Bosman, Michel, Quek, Su Ying, Eda, Goki (2021-06-23). Impurity-Induced Emission in Re-Doped WS2 Monolayers. NANO LETTERS 21 (12) : 5293-5300. ScholarBank@NUS Repository. https://doi.org/10.1021/acs.nanolett.1c01439
Abstract: Impurity doping is a viable route toward achieving desired subgap optical response in semiconductors. In strongly excitonic two-dimensional (2D) semiconductors such as transition metal dichalcogenides (TMDs), impurities are expected to result in bound-exciton emission. However, doped TMDs often exhibit a broad Stokes-shifted emission without characteristic features, hampering strategic materials engineering. Here we report observation of a well-defined impurity-induced emission in monolayer WS2 substitutionally doped with rhenium (Re), which is an electron donor. The emission exhibits characteristics of localized states and dominates the spectrum up to 200 K. Gate dependence reveals that neutral impurity centers are responsible for the observed emission. Using GW-Bethe-Salpeter equation (GW-BSE) calculations, we attribute the emission to transitions between spin-split upper Re band and valence band edge.
Source Title: NANO LETTERS
URI: https://scholarbank.nus.edu.sg/handle/10635/194630
ISSN: 15306984
15306992
DOI: 10.1021/acs.nanolett.1c01439
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