Please use this identifier to cite or link to this item: https://doi.org/10.1021/acs.nanolett.1c01439
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dc.titleImpurity-Induced Emission in Re-Doped WS2 Monolayers
dc.contributor.authorLoh, Leyi
dc.contributor.authorChen, Yifeng
dc.contributor.authorWang, Junyong
dc.contributor.authorYin, Xinmao
dc.contributor.authorTang, Chi Sin
dc.contributor.authorZhang, Qi
dc.contributor.authorWatanabe, Kenji
dc.contributor.authorTaniguchi, Takashi
dc.contributor.authorWee, Andrew TS
dc.contributor.authorBosman, Michel
dc.contributor.authorQuek, Su Ying
dc.contributor.authorEda, Goki
dc.date.accessioned2021-07-21T06:39:49Z
dc.date.available2021-07-21T06:39:49Z
dc.date.issued2021-06-23
dc.identifier.citationLoh, Leyi, Chen, Yifeng, Wang, Junyong, Yin, Xinmao, Tang, Chi Sin, Zhang, Qi, Watanabe, Kenji, Taniguchi, Takashi, Wee, Andrew TS, Bosman, Michel, Quek, Su Ying, Eda, Goki (2021-06-23). Impurity-Induced Emission in Re-Doped WS2 Monolayers. NANO LETTERS 21 (12) : 5293-5300. ScholarBank@NUS Repository. https://doi.org/10.1021/acs.nanolett.1c01439
dc.identifier.issn15306984
dc.identifier.issn15306992
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/194630
dc.description.abstractImpurity doping is a viable route toward achieving desired subgap optical response in semiconductors. In strongly excitonic two-dimensional (2D) semiconductors such as transition metal dichalcogenides (TMDs), impurities are expected to result in bound-exciton emission. However, doped TMDs often exhibit a broad Stokes-shifted emission without characteristic features, hampering strategic materials engineering. Here we report observation of a well-defined impurity-induced emission in monolayer WS2 substitutionally doped with rhenium (Re), which is an electron donor. The emission exhibits characteristics of localized states and dominates the spectrum up to 200 K. Gate dependence reveals that neutral impurity centers are responsible for the observed emission. Using GW-Bethe-Salpeter equation (GW-BSE) calculations, we attribute the emission to transitions between spin-split upper Re band and valence band edge.
dc.language.isoen
dc.publisherAMER CHEMICAL SOC
dc.sourceElements
dc.subjectImpurities
dc.subjectExcitons
dc.subjectMonolayers
dc.subjectDefects
dc.subjectDoping
dc.typeArticle
dc.date.updated2021-07-20T03:01:10Z
dc.contributor.departmentCENTRE FOR ADVANCED 2D MATERIALS
dc.contributor.departmentDEPT OF PHYSICS
dc.description.doi10.1021/acs.nanolett.1c01439
dc.description.sourcetitleNANO LETTERS
dc.description.volume21
dc.description.issue12
dc.description.page5293-5300
dc.published.statePublished
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