Please use this identifier to cite or link to this item: https://doi.org/10.1002/adma.202004370
Title: Nanometer-Scale Uniform Conductance Switching in Molecular Memristors
Authors: Sreetosh Goswami 
Debalina Deb
Agnès Tempez
Marc Chaigneau
SANTI PRASAD RATH 
Manohar Lal 
Ariando 
R. Stanley Williams
SREEBRATA GOSWAMI 
Thirumalai Venkatesan 
Keywords: conductive atomic force microscopy
memristor
tip enhanced Raman spectroscopy
transition metal complex
uniformity
Issue Date: 6-Sep-2020
Publisher: WILEY
Citation: Sreetosh Goswami, Debalina Deb, Agnès Tempez, Marc Chaigneau, SANTI PRASAD RATH, Manohar Lal, Ariando, R. Stanley Williams, SREEBRATA GOSWAMI, Thirumalai Venkatesan (2020-09-06). Nanometer-Scale Uniform Conductance Switching in Molecular Memristors. Advanced Materials 32 (42). ScholarBank@NUS Repository. https://doi.org/10.1002/adma.202004370
Rights: CC0 1.0 Universal
Abstract: One common challenge highlighted in almost every review article on organic resistive memory is the lack of areal switching uniformity. This, in fact, is a puzzle because a molecular switching mechanism should ideally be isotropic and produce homogeneous current switching free from electroforming. Such a demonstration, however, remains elusive to date. The reports attempting to characterize a nanoscopic picture of switching in molecular films show random current spikes, just opposite to the expectation. Here, this longstanding conundrum is resolved by demonstrating 100% spatially homogeneous current switching (driven by molecular redox) in memristors based on Ru-complexes of azo-aromatic ligands. Through a concurrent nanoscopic spatial mapping using conductive atomic force microscopy and in operando tip-enhanced Raman spectroscopy (both with resolution
Source Title: Advanced Materials
URI: https://scholarbank.nus.edu.sg/handle/10635/189002
ISSN: 15214095
DOI: 10.1002/adma.202004370
Rights: CC0 1.0 Universal
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