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https://doi.org/10.1002/adma.202004370
Title: | Nanometer-Scale Uniform Conductance Switching in Molecular Memristors | Authors: | Sreetosh Goswami Debalina Deb Agnès Tempez Marc Chaigneau SANTI PRASAD RATH Manohar Lal Ariando R. Stanley Williams SREEBRATA GOSWAMI Thirumalai Venkatesan |
Keywords: | conductive atomic force microscopy memristor tip enhanced Raman spectroscopy transition metal complex uniformity |
Issue Date: | 6-Sep-2020 | Publisher: | WILEY | Citation: | Sreetosh Goswami, Debalina Deb, Agnès Tempez, Marc Chaigneau, SANTI PRASAD RATH, Manohar Lal, Ariando, R. Stanley Williams, SREEBRATA GOSWAMI, Thirumalai Venkatesan (2020-09-06). Nanometer-Scale Uniform Conductance Switching in Molecular Memristors. Advanced Materials 32 (42). ScholarBank@NUS Repository. https://doi.org/10.1002/adma.202004370 | Rights: | CC0 1.0 Universal | Abstract: | One common challenge highlighted in almost every review article on organic resistive memory is the lack of areal switching uniformity. This, in fact, is a puzzle because a molecular switching mechanism should ideally be isotropic and produce homogeneous current switching free from electroforming. Such a demonstration, however, remains elusive to date. The reports attempting to characterize a nanoscopic picture of switching in molecular films show random current spikes, just opposite to the expectation. Here, this longstanding conundrum is resolved by demonstrating 100% spatially homogeneous current switching (driven by molecular redox) in memristors based on Ru-complexes of azo-aromatic ligands. Through a concurrent nanoscopic spatial mapping using conductive atomic force microscopy and in operando tip-enhanced Raman spectroscopy (both with resolution | Source Title: | Advanced Materials | URI: | https://scholarbank.nus.edu.sg/handle/10635/189002 | ISSN: | 15214095 | DOI: | 10.1002/adma.202004370 | Rights: | CC0 1.0 Universal |
Appears in Collections: | Staff Publications Elements |
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