Please use this identifier to cite or link to this item:
https://doi.org/10.1002/adma.202004370
DC Field | Value | |
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dc.title | Nanometer-Scale Uniform Conductance Switching in Molecular Memristors | |
dc.contributor.author | Sreetosh Goswami | |
dc.contributor.author | Debalina Deb | |
dc.contributor.author | Agnès Tempez | |
dc.contributor.author | Marc Chaigneau | |
dc.contributor.author | SANTI PRASAD RATH | |
dc.contributor.author | Manohar Lal | |
dc.contributor.author | Ariando | |
dc.contributor.author | R. Stanley Williams | |
dc.contributor.author | SREEBRATA GOSWAMI | |
dc.contributor.author | Thirumalai Venkatesan | |
dc.date.accessioned | 2021-04-09T07:01:14Z | |
dc.date.available | 2021-04-09T07:01:14Z | |
dc.date.issued | 2020-09-06 | |
dc.identifier.citation | Sreetosh Goswami, Debalina Deb, Agnès Tempez, Marc Chaigneau, SANTI PRASAD RATH, Manohar Lal, Ariando, R. Stanley Williams, SREEBRATA GOSWAMI, Thirumalai Venkatesan (2020-09-06). Nanometer-Scale Uniform Conductance Switching in Molecular Memristors. Advanced Materials 32 (42). ScholarBank@NUS Repository. https://doi.org/10.1002/adma.202004370 | |
dc.identifier.issn | 15214095 | |
dc.identifier.uri | https://scholarbank.nus.edu.sg/handle/10635/189002 | |
dc.description.abstract | One common challenge highlighted in almost every review article on organic resistive memory is the lack of areal switching uniformity. This, in fact, is a puzzle because a molecular switching mechanism should ideally be isotropic and produce homogeneous current switching free from electroforming. Such a demonstration, however, remains elusive to date. The reports attempting to characterize a nanoscopic picture of switching in molecular films show random current spikes, just opposite to the expectation. Here, this longstanding conundrum is resolved by demonstrating 100% spatially homogeneous current switching (driven by molecular redox) in memristors based on Ru-complexes of azo-aromatic ligands. Through a concurrent nanoscopic spatial mapping using conductive atomic force microscopy and in operando tip-enhanced Raman spectroscopy (both with resolution | |
dc.language.iso | en | |
dc.publisher | WILEY | |
dc.rights | CC0 1.0 Universal | |
dc.rights.uri | http://creativecommons.org/publicdomain/zero/1.0/ | |
dc.subject | conductive atomic force microscopy | |
dc.subject | memristor | |
dc.subject | tip enhanced Raman spectroscopy | |
dc.subject | transition metal complex | |
dc.subject | uniformity | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL AND COMPUTER ENGINEERING | |
dc.contributor.department | DEPT OF PHYSICS | |
dc.contributor.department | NUS NANOSCIENCE & NANOTECH INITIATIVE | |
dc.description.doi | 10.1002/adma.202004370 | |
dc.description.sourcetitle | Advanced Materials | |
dc.description.volume | 32 | |
dc.description.issue | 42 | |
dc.published.state | Published | |
dc.grant.id | NRF-CRP15-2015-01 | |
dc.grant.fundingagency | National Research Foundation | |
Appears in Collections: | Staff Publications Elements |
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File | Description | Size | Format | Access Settings | Version | |
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Nanometer-Scale Uniform Conductance Switching in Molecular Memristors.pdf | 6 MB | Adobe PDF | CLOSED | Published |
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