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|Title:||Infrared Black Phosphorus Phototransistor with Tunable Responsivity and Low Noise Equivalent Power||Authors:||HUANG LI
TAN WEE CHONG
ANG KAH WEE
|Issue Date:||18-Oct-2017||Publisher:||American Chemical Society||Citation:||HUANG LI, TAN WEE CHONG, WANG LIN, DONG BOWEI, LEE CHENGKUO, ANG KAH WEE (2017-10-18). Infrared Black Phosphorus Phototransistor with Tunable Responsivity and Low Noise Equivalent Power. ACS Applied Materials and Interfaces 9 (41) : 36130-36136. ScholarBank@NUS Repository. https://doi.org/10.1021/acsami.7b09713||Abstract:||The narrow band gap property of black phosphorus (BP) that bridges the energy gap between graphene and transition metal dichalcogenides holds great promise for enabling broadband optical detection from ultraviolet to infrared wavelengths. Despite its rich potential as an intriguing building block for optoelectronic applications, however, very little progress has been made in realizing BP-based infrared photodetectors. Here, we demonstrate a high sensitivity BP phototransistor that operates at a short-wavelength infrared (SWIR) of 2 μm under room temperature. Excellent tunability of responsivity and photoconductive gain are acquired by utilizing the electrostatic gating effect, which controls the dominant photocurrent generation mechanism via adjusting the band alignment in the phototransistor. Under a nanowatt-level illumination, a peak responsivity of 8.5 A/W and a low noise equivalent power (NEP) of less than 1 pW/Hz1/2 are achieved at a small operating source-drain bias of -1 V. Our phototransistor demonstrates a simple and effective approach to continuously tune the detection capability of BP photodetectors, paving the way to exploit BP to numerous low-light-level detection applications such as biomolecular sensing, meteorological data collection, and thermal imaging.||Source Title:||ACS Applied Materials and Interfaces||URI:||https://scholarbank.nus.edu.sg/handle/10635/184405||ISSN:||1944-8244
|Appears in Collections:||Staff Publications|
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