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https://doi.org/10.1063/1.4860950
| Title: | Resistive switching properties of Ce and Mn co-doped BiFeO3 thin films for nonvolatile memory application | Authors: | Tang, Z Zeng, J Xiong, Y Tang, M Xu, D Cheng, C Xiao, Y Zhou, Y |
Keywords: | Conduction Mechanism Current voltage curve Fabricated device Non-volatile memory application Programming voltage Resistive switching Schottky emissions Space-charge limited Curve fitting Manganese Sol-gel process Thin films Switching systems |
Issue Date: | 2013 | Citation: | Tang, Z, Zeng, J, Xiong, Y, Tang, M, Xu, D, Cheng, C, Xiao, Y, Zhou, Y (2013). Resistive switching properties of Ce and Mn co-doped BiFeO3 thin films for nonvolatile memory application. AIP Advances 3 (12) : 122117. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4860950 | Rights: | Attribution 4.0 International | Abstract: | The Ce and Mn co-doped BiFeO3 (BCFMO) thin films were synthesized on Pt/Ti/SiO2/Si substrates using a sol-gel method. The unipolar resistive switching (URS) and bipolar resistive switching (BRS) behaviors were observed in the Pt/BCFMO/Pt device structure, which was attributed to the formation/rupture of metal filaments. The fabricated device exhibits a large ROFF/RON ratio (>80), long retention time (>105 s) and low programming voltages (<1.5 V). Analysis of linear fitting current-voltage curves suggests that the space charge limited leakage current (SCLC) and Schottky emission were observed as the conduction mechanisms of the devices. © 2013 Author(s). | Source Title: | AIP Advances | URI: | https://scholarbank.nus.edu.sg/handle/10635/183190 | ISSN: | 21583226 | DOI: | 10.1063/1.4860950 | Rights: | Attribution 4.0 International |
| Appears in Collections: | Staff Publications Elements |
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