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Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4860950
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dc.titleResistive switching properties of Ce and Mn co-doped BiFeO3 thin films for nonvolatile memory application
dc.contributor.authorTang, Z
dc.contributor.authorZeng, J
dc.contributor.authorXiong, Y
dc.contributor.authorTang, M
dc.contributor.authorXu, D
dc.contributor.authorCheng, C
dc.contributor.authorXiao, Y
dc.contributor.authorZhou, Y
dc.date.accessioned2020-11-10T00:28:57Z
dc.date.available2020-11-10T00:28:57Z
dc.date.issued2013
dc.identifier.citationTang, Z, Zeng, J, Xiong, Y, Tang, M, Xu, D, Cheng, C, Xiao, Y, Zhou, Y (2013). Resistive switching properties of Ce and Mn co-doped BiFeO3 thin films for nonvolatile memory application. AIP Advances 3 (12) : 122117. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4860950
dc.identifier.issn21583226
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/183190
dc.description.abstractThe Ce and Mn co-doped BiFeO3 (BCFMO) thin films were synthesized on Pt/Ti/SiO2/Si substrates using a sol-gel method. The unipolar resistive switching (URS) and bipolar resistive switching (BRS) behaviors were observed in the Pt/BCFMO/Pt device structure, which was attributed to the formation/rupture of metal filaments. The fabricated device exhibits a large ROFF/RON ratio (>80), long retention time (>105 s) and low programming voltages (<1.5 V). Analysis of linear fitting current-voltage curves suggests that the space charge limited leakage current (SCLC) and Schottky emission were observed as the conduction mechanisms of the devices. © 2013 Author(s).
dc.rightsAttribution 4.0 International
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.sourceUnpaywall 20201031
dc.subjectConduction Mechanism
dc.subjectCurrent voltage curve
dc.subjectFabricated device
dc.subjectNon-volatile memory application
dc.subjectProgramming voltage
dc.subjectResistive switching
dc.subjectSchottky emissions
dc.subjectSpace-charge limited
dc.subjectCurve fitting
dc.subjectManganese
dc.subjectSol-gel process
dc.subjectThin films
dc.subjectSwitching systems
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1063/1.4860950
dc.description.sourcetitleAIP Advances
dc.description.volume3
dc.description.issue12
dc.description.page122117
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