Please use this identifier to cite or link to this item:
https://doi.org/10.1155/2013/352738
| Title: | Near infrared lateral photovoltaic effect in LaTiO3 films | Authors: | Jin, W Zhang, S Ni, H Xiang, W Xi, J Feng, X Zhao, K |
Issue Date: | 2013 | Citation: | Jin, W, Zhang, S, Ni, H, Xiang, W, Xi, J, Feng, X, Zhao, K (2013). Near infrared lateral photovoltaic effect in LaTiO3 films. International Journal of Photoenergy 2013 : 352738. ScholarBank@NUS Repository. https://doi.org/10.1155/2013/352738 | Rights: | Attribution 4.0 International | Abstract: | We have reported on the lateral photovoltaic effect of LaTiO3 films epitaxially grown on (100) SrTiO3 substrates. Under illumination of continuous 1064 nm laser beam on the LaTiO3 film through SrTiO3 substrate, the open-circuit photovoltage depended linearly on the illuminated position. The photosensitivity can be modified by bias current. These results indicated that the LaTiO3 films give rise to a potentially photoelectronic device for near infrared position-sensitive detection. © 2013 Wujun Jin et al. | Source Title: | International Journal of Photoenergy | URI: | https://scholarbank.nus.edu.sg/handle/10635/180773 | ISSN: | 1110-662X | DOI: | 10.1155/2013/352738 | Rights: | Attribution 4.0 International |
| Appears in Collections: | Staff Publications Elements |
Show full item record
Files in This Item:
| File | Description | Size | Format | Access Settings | Version | |
|---|---|---|---|---|---|---|
| 10_1155_2013_352738.pdf | 2.05 MB | Adobe PDF | OPEN | None | View/Download |
This item is licensed under a Creative Commons License
