Please use this identifier to cite or link to this item: https://doi.org/10.1155/2013/352738
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dc.titleNear infrared lateral photovoltaic effect in LaTiO3 films
dc.contributor.authorJin, W
dc.contributor.authorZhang, S
dc.contributor.authorNi, H
dc.contributor.authorXiang, W
dc.contributor.authorXi, J
dc.contributor.authorFeng, X
dc.contributor.authorZhao, K
dc.date.accessioned2020-10-27T04:42:21Z
dc.date.available2020-10-27T04:42:21Z
dc.date.issued2013
dc.identifier.citationJin, W, Zhang, S, Ni, H, Xiang, W, Xi, J, Feng, X, Zhao, K (2013). Near infrared lateral photovoltaic effect in LaTiO3 films. International Journal of Photoenergy 2013 : 352738. ScholarBank@NUS Repository. https://doi.org/10.1155/2013/352738
dc.identifier.issn1110-662X
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/180773
dc.description.abstractWe have reported on the lateral photovoltaic effect of LaTiO3 films epitaxially grown on (100) SrTiO3 substrates. Under illumination of continuous 1064 nm laser beam on the LaTiO3 film through SrTiO3 substrate, the open-circuit photovoltage depended linearly on the illuminated position. The photosensitivity can be modified by bias current. These results indicated that the LaTiO3 films give rise to a potentially photoelectronic device for near infrared position-sensitive detection. © 2013 Wujun Jin et al.
dc.rightsAttribution 4.0 International
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.sourceUnpaywall 20201031
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1155/2013/352738
dc.description.sourcetitleInternational Journal of Photoenergy
dc.description.volume2013
dc.description.page352738
dc.published.statePublished
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