Please use this identifier to cite or link to this item: https://doi.org/10.3762/bjnano.5.189
Title: Silicon and germanium nanocrystals: Properties and characterization
Authors: Capan, I
Carvalho, A 
Coutinho, J
Keywords: Germanium
Models
Nanocrystals
Silicon
Bulk materials
Current limitation
Germanium nanocrystals
Group-IV
Optoelectronic applications
Traditional boundaries
Characterization
Issue Date: 2014
Citation: Capan, I, Carvalho, A, Coutinho, J (2014). Silicon and germanium nanocrystals: Properties and characterization. Beilstein Journal of Nanotechnology 5 (1) : 1787-1794. ScholarBank@NUS Repository. https://doi.org/10.3762/bjnano.5.189
Abstract: Group-IV nanocrystals have emerged as a promising group of materials that extends the realm of application of bulk diamond, silicon, germanium and related materials beyond their traditional boundaries. Over the last two decades of research, their potential for application in areas such as optoelectronic applications and memory devices has been progressively unraveled. Nevertheless, new challenges with no parallel in the respective bulk material counterparts have arisen. In this review, we consider what has been achieved and what are the current limitations with regard to growth, characterization and modeling of silicon and germanium nanocrystals and related materials. © 2014 Capan et al.
Source Title: Beilstein Journal of Nanotechnology
URI: https://scholarbank.nus.edu.sg/handle/10635/176172
ISSN: 2190-4286
DOI: 10.3762/bjnano.5.189
Appears in Collections:Elements
Staff Publications

Show full item record
Files in This Item:
File Description SizeFormatAccess SettingsVersion 
10_3762_bjnano_5_189.pdf601.71 kBAdobe PDF

OPEN

NoneView/Download

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.