Please use this identifier to cite or link to this item:
https://doi.org/10.3762/bjnano.5.189
Title: | Silicon and germanium nanocrystals: Properties and characterization | Authors: | Capan, I Carvalho, A Coutinho, J |
Keywords: | Germanium Models Nanocrystals Silicon Bulk materials Current limitation Germanium nanocrystals Group-IV Optoelectronic applications Traditional boundaries Characterization |
Issue Date: | 2014 | Citation: | Capan, I, Carvalho, A, Coutinho, J (2014). Silicon and germanium nanocrystals: Properties and characterization. Beilstein Journal of Nanotechnology 5 (1) : 1787-1794. ScholarBank@NUS Repository. https://doi.org/10.3762/bjnano.5.189 | Abstract: | Group-IV nanocrystals have emerged as a promising group of materials that extends the realm of application of bulk diamond, silicon, germanium and related materials beyond their traditional boundaries. Over the last two decades of research, their potential for application in areas such as optoelectronic applications and memory devices has been progressively unraveled. Nevertheless, new challenges with no parallel in the respective bulk material counterparts have arisen. In this review, we consider what has been achieved and what are the current limitations with regard to growth, characterization and modeling of silicon and germanium nanocrystals and related materials. © 2014 Capan et al. | Source Title: | Beilstein Journal of Nanotechnology | URI: | https://scholarbank.nus.edu.sg/handle/10635/176172 | ISSN: | 2190-4286 | DOI: | 10.3762/bjnano.5.189 |
Appears in Collections: | Elements Staff Publications |
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