Please use this identifier to cite or link to this item:
https://doi.org/10.1038/srep17424
Title: | Thickness-induced metal-insulator transition in Sb-doped SnO 2 Ultrathin Films: The role of quantum confinement | Authors: | Ke, C Zhu, W Zhang, Z Soon Tok, E Ling, B Pan, J |
Issue Date: | 2015 | Publisher: | Nature Publishing Group | Citation: | Ke, C, Zhu, W, Zhang, Z, Soon Tok, E, Ling, B, Pan, J (2015). Thickness-induced metal-insulator transition in Sb-doped SnO 2 Ultrathin Films: The role of quantum confinement. Scientific Reports 5 : 17424. ScholarBank@NUS Repository. https://doi.org/10.1038/srep17424 | Abstract: | A thickness induced metal-insulator transition (MIT) was firstly observed in Sb-doped SnO 2 (SnO 2:Sb) epitaxial ultrathin films deposited on sapphire substrates by pulsed laser deposition. Both electrical and spectroscopic studies provide clear evidence of a critical thickness for the metallic conductivity in SnO 2:Sb thin films and the oxidation state transition of the impurity element Sb. With the shrinkage of film thickness, the broadening of the energy band gap as well as the enhancement of the impurity activation energy was studied and attributed to the quantum confinement effect. Based on the scenario of impurity level pinning and band gap broadening in quantum confined nanostructures, we proposed a generalized energy diagram to understand the thickness induced MIT in the SnO 2:Sb system. | Source Title: | Scientific Reports | URI: | https://scholarbank.nus.edu.sg/handle/10635/175461 | ISSN: | 20452322 | DOI: | 10.1038/srep17424 |
Appears in Collections: | Staff Publications Elements |
Show full item record
Files in This Item:
File | Description | Size | Format | Access Settings | Version | |
---|---|---|---|---|---|---|
10_1038_srep17424.pdf | 2.73 MB | Adobe PDF | OPEN | None | View/Download |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.