Please use this identifier to cite or link to this item: https://doi.org/10.1039/c7nr00742f
Title: Investigation of the metal-insulator transition in NdNiO3 films by site-selective X-ray absorption spectroscopy
Authors: Palina, N
Wang, L
Dash, S
Yu, X 
Breese, M.B.H 
Wang, J
Rusydi, A 
Keywords: Deposition
Electronic properties
Excitons
Metal insulator boundaries
Nickel
Oxide films
Pulsed laser deposition
Semiconductor insulator boundaries
Temperature
Thin films
X ray absorption near edge structure spectroscopy
X ray absorption spectroscopy
Crystallographic structure
Disproportionations
Insulating phase
Multifunctional oxides
Orbital occupancy
Possible mechanisms
Temperature-dependent resistivity
X-ray absorption near-edge structure
Metal insulator transition
Issue Date: 2017
Publisher: Royal Society of Chemistry
Citation: Palina, N, Wang, L, Dash, S, Yu, X, Breese, M.B.H, Wang, J, Rusydi, A (2017). Investigation of the metal-insulator transition in NdNiO3 films by site-selective X-ray absorption spectroscopy. Nanoscale 9 (18) : 6094-6102. ScholarBank@NUS Repository. https://doi.org/10.1039/c7nr00742f
Abstract: In this work, multifunctional oxide NdNiO3 (NNO) thin films grown on a SrTiO3 (STO) substrate using pulsed-laser deposition are studied. Temperature dependent resistivity measurements revealed that NNO/STO samples exhibit a sharp thickness dependent metal-insulator transition (MIT) over a range of 150-200 K. It is known that the electronic properties of correlated oxides are extremely complex and sensitive to changes in orbital occupancy. To evaluate the changes in the electronic and/or crystallographic structure responsible for the MIT, a site-selective (O, Ni and Nd) X-ray absorption near edge structure (XANES) analysis is performed above and below the transition temperature. Analysis of XANES spectra suggests that: (i) in NNO films nominally trivalent Ni ions exhibit multiple valency (bond disproportionation), (ii) intermetallic hybridization plays an important role, (iii) the presence of strong O 2p-O 2p hole correlation at low temperature results in the opening of the p-p gap and (iv) the valency of Nd ions matches well with that of Nd3+. For NNO films exhibiting a sharp MIT, Ni 3d electron localization and concurrent existence of Ni 3d8 and Ni 3d8L2 states are responsible for the observed transition. At temperatures below the MIT the O 2p-O 2p hole correlation is strong enough to split the O 2p band stabilizing insulating phase. Temperature and thickness dependent differences observed in the site-selective XANES data are discussed in terms of possible mechanisms for the MIT (negative charge-transfer type). © The Royal Society of Chemistry 2017.
Source Title: Nanoscale
URI: https://scholarbank.nus.edu.sg/handle/10635/174426
ISSN: 2040-3364
DOI: 10.1039/c7nr00742f
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