Please use this identifier to cite or link to this item: https://doi.org/10.1039/c7nr00742f
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dc.titleInvestigation of the metal-insulator transition in NdNiO3 films by site-selective X-ray absorption spectroscopy
dc.contributor.authorPalina, N
dc.contributor.authorWang, L
dc.contributor.authorDash, S
dc.contributor.authorYu, X
dc.contributor.authorBreese, M.B.H
dc.contributor.authorWang, J
dc.contributor.authorRusydi, A
dc.date.accessioned2020-09-04T03:40:48Z
dc.date.available2020-09-04T03:40:48Z
dc.date.issued2017
dc.identifier.citationPalina, N, Wang, L, Dash, S, Yu, X, Breese, M.B.H, Wang, J, Rusydi, A (2017). Investigation of the metal-insulator transition in NdNiO3 films by site-selective X-ray absorption spectroscopy. Nanoscale 9 (18) : 6094-6102. ScholarBank@NUS Repository. https://doi.org/10.1039/c7nr00742f
dc.identifier.issn2040-3364
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/174426
dc.description.abstractIn this work, multifunctional oxide NdNiO3 (NNO) thin films grown on a SrTiO3 (STO) substrate using pulsed-laser deposition are studied. Temperature dependent resistivity measurements revealed that NNO/STO samples exhibit a sharp thickness dependent metal-insulator transition (MIT) over a range of 150-200 K. It is known that the electronic properties of correlated oxides are extremely complex and sensitive to changes in orbital occupancy. To evaluate the changes in the electronic and/or crystallographic structure responsible for the MIT, a site-selective (O, Ni and Nd) X-ray absorption near edge structure (XANES) analysis is performed above and below the transition temperature. Analysis of XANES spectra suggests that: (i) in NNO films nominally trivalent Ni ions exhibit multiple valency (bond disproportionation), (ii) intermetallic hybridization plays an important role, (iii) the presence of strong O 2p-O 2p hole correlation at low temperature results in the opening of the p-p gap and (iv) the valency of Nd ions matches well with that of Nd3+. For NNO films exhibiting a sharp MIT, Ni 3d electron localization and concurrent existence of Ni 3d8 and Ni 3d8L2 states are responsible for the observed transition. At temperatures below the MIT the O 2p-O 2p hole correlation is strong enough to split the O 2p band stabilizing insulating phase. Temperature and thickness dependent differences observed in the site-selective XANES data are discussed in terms of possible mechanisms for the MIT (negative charge-transfer type). © The Royal Society of Chemistry 2017.
dc.publisherRoyal Society of Chemistry
dc.sourceUnpaywall 20200831
dc.subjectDeposition
dc.subjectElectronic properties
dc.subjectExcitons
dc.subjectMetal insulator boundaries
dc.subjectNickel
dc.subjectOxide films
dc.subjectPulsed laser deposition
dc.subjectSemiconductor insulator boundaries
dc.subjectTemperature
dc.subjectThin films
dc.subjectX ray absorption near edge structure spectroscopy
dc.subjectX ray absorption spectroscopy
dc.subjectCrystallographic structure
dc.subjectDisproportionations
dc.subjectInsulating phase
dc.subjectMultifunctional oxides
dc.subjectOrbital occupancy
dc.subjectPossible mechanisms
dc.subjectTemperature-dependent resistivity
dc.subjectX-ray absorption near-edge structure
dc.subjectMetal insulator transition
dc.typeArticle
dc.contributor.departmentSINGAPORE SYNCHROTRON LIGHT SOURCE
dc.contributor.departmentDEPT OF PHYSICS
dc.description.doi10.1039/c7nr00742f
dc.description.sourcetitleNanoscale
dc.description.volume9
dc.description.issue18
dc.description.page6094-6102
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