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https://doi.org/10.1038/s41467-018-05397-w
Title: | Two-dimensional multibit optoelectronic memory with broadband spectrum distinction | Authors: | Xiang D. Liu T. Xu J. Tan J.Y. Hu Z. Lei B. Zheng Y. Wu J. Neto A.H.C. Liu L. Chen W. |
Keywords: | boron boron nitride phosphorus tungsten tungsten diselenide unclassified drug memory model validation pixel research work semiconductor industry spectrum two-dimensional modeling Article chemical structure color illumination image analysis information processing memory molecular dynamics multibit nonvolatile optoelectronic memory retention time structure analysis |
Issue Date: | 2018 | Publisher: | Nature Publishing Group | Citation: | Xiang D., Liu T., Xu J., Tan J.Y., Hu Z., Lei B., Zheng Y., Wu J., Neto A.H.C., Liu L., Chen W. (2018). Two-dimensional multibit optoelectronic memory with broadband spectrum distinction. Nature Communications 9 (1) : 2966. ScholarBank@NUS Repository. https://doi.org/10.1038/s41467-018-05397-w | Abstract: | Optoelectronic memory plays a vital role in modern semiconductor industry. The fast emerging requirements for device miniaturization and structural flexibility have diverted research interest to two-dimensional thin layered materials. Here, we report a multibit nonvolatile optoelectronic memory based on a heterostructure of monolayer tungsten diselenide and few-layer hexagonal boron nitride. The tungsten diselenide/boron nitride memory exhibits a memory switching ratio approximately 1.1 × 10 6 , which ensures over 128 (7 bit) distinct storage states. The memory demonstrates robustness with retention time over 4.5 × 10 4 s. Moreover, the ability of broadband spectrum distinction enables its application in filter-free color image sensor. This concept is further validated through the realization of integrated tungsten diselenide/boron nitride pixel matrix which captured a specific image recording the three primary colors (red, green, and blue). The heterostructure architecture is also applicable to other two-dimensional materials, which is confirmed by the realization of black phosphorus/boron nitride optoelectronic memory. © 2018, The Author(s). | Source Title: | Nature Communications | URI: | https://scholarbank.nus.edu.sg/handle/10635/174214 | ISSN: | 2041-1723 | DOI: | 10.1038/s41467-018-05397-w |
Appears in Collections: | Elements Staff Publications |
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