Please use this identifier to cite or link to this item: https://doi.org/10.1038/s41467-018-05397-w
Title: Two-dimensional multibit optoelectronic memory with broadband spectrum distinction
Authors: Xiang D. 
Liu T. 
Xu J.
Tan J.Y. 
Hu Z. 
Lei B.
Zheng Y.
Wu J.
Neto A.H.C.
Liu L.
Chen W. 
Keywords: boron
boron nitride
phosphorus
tungsten
tungsten diselenide
unclassified drug
memory
model validation
pixel
research work
semiconductor industry
spectrum
two-dimensional modeling
Article
chemical structure
color
illumination
image analysis
information processing
memory
molecular dynamics
multibit nonvolatile optoelectronic memory
retention time
structure analysis
Issue Date: 2018
Publisher: Nature Publishing Group
Citation: Xiang D., Liu T., Xu J., Tan J.Y., Hu Z., Lei B., Zheng Y., Wu J., Neto A.H.C., Liu L., Chen W. (2018). Two-dimensional multibit optoelectronic memory with broadband spectrum distinction. Nature Communications 9 (1) : 2966. ScholarBank@NUS Repository. https://doi.org/10.1038/s41467-018-05397-w
Abstract: Optoelectronic memory plays a vital role in modern semiconductor industry. The fast emerging requirements for device miniaturization and structural flexibility have diverted research interest to two-dimensional thin layered materials. Here, we report a multibit nonvolatile optoelectronic memory based on a heterostructure of monolayer tungsten diselenide and few-layer hexagonal boron nitride. The tungsten diselenide/boron nitride memory exhibits a memory switching ratio approximately 1.1 × 10 6 , which ensures over 128 (7 bit) distinct storage states. The memory demonstrates robustness with retention time over 4.5 × 10 4 s. Moreover, the ability of broadband spectrum distinction enables its application in filter-free color image sensor. This concept is further validated through the realization of integrated tungsten diselenide/boron nitride pixel matrix which captured a specific image recording the three primary colors (red, green, and blue). The heterostructure architecture is also applicable to other two-dimensional materials, which is confirmed by the realization of black phosphorus/boron nitride optoelectronic memory. © 2018, The Author(s).
Source Title: Nature Communications
URI: https://scholarbank.nus.edu.sg/handle/10635/174214
ISSN: 2041-1723
DOI: 10.1038/s41467-018-05397-w
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