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|Title:||Defect engineered bioactive transition metals dichalcogenides quantum dots||Authors:||Ding X.
SW480 cell line
|Issue Date:||2019||Publisher:||Nature Publishing Group||Citation:||Ding X., Peng F., Zhou J., Gong W., Slaven G., Loh K.P., Lim C.T., Leong D.T. (2019). Defect engineered bioactive transition metals dichalcogenides quantum dots. Nature Communications 10 (1) : 41. ScholarBank@NUS Repository. https://doi.org/10.1038/s41467-018-07835-1||Abstract:||Transition metal dichalcogenide (TMD) quantum dots (QDs) are fundamentally interesting because of the stronger quantum size effect with decreased lateral dimensions relative to their larger 2D nanosheet counterparts. However, the preparation of a wide range of TMD QDs is still a continual challenge. Here we demonstrate a bottom-up strategy utilizing TM oxides or chlorides and chalcogen precursors to synthesize a small library of TMD QDs (MoS 2 , WS 2 , RuS 2 , MoTe 2 , MoSe 2 , WSe 2 and RuSe 2 ). The reaction reaches equilibrium almost instantaneously (~10–20 s) with mild aqueous and room temperature conditions. Tunable defect engineering can be achieved within the same reactions by deviating the precursors’ reaction stoichiometries from their fixed molecular stoichiometries. Using MoS 2 QDs for proof-of-concept biomedical applications, we show that increasing sulfur defects enhanced oxidative stress generation, through the photodynamic effect, in cancer cells. This facile strategy will motivate future design of TMDs nanomaterials utilizing defect engineering for biomedical applications. © 2019, The Author(s).||Source Title:||Nature Communications||URI:||https://scholarbank.nus.edu.sg/handle/10635/174187||ISSN:||20411723||DOI:||10.1038/s41467-018-07835-1|
|Appears in Collections:||Elements|
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