Please use this identifier to cite or link to this item: https://doi.org/10.1021/acsenergylett.0c00763
Title: Rapid Vapor-Phase Deposition of High-Mobility p-Type Buffer Layers on Perovskite Photovoltaics for Efficient Semitransparent Devices
Authors: Jagt, Robert A
Huq, Tahmida N
Hill, Sam A
Thway, Maung 
Liu, Tianyuan 
Napari, Mari
Roose, Bart
Gałkowski, Krzysztof
Li, Weiwei
Lin, Serena Fen 
Stranks, Samuel D
MacManus-Driscoll, Judith L
Hoye, Robert LZ
Keywords: Physics.app-ph
Issue Date: 22-Jun-2020
Publisher: American Chemical Society
Citation: Jagt, Robert A, Huq, Tahmida N, Hill, Sam A, Thway, Maung, Liu, Tianyuan, Napari, Mari, Roose, Bart, Gałkowski, Krzysztof, Li, Weiwei, Lin, Serena Fen, Stranks, Samuel D, MacManus-Driscoll, Judith L, Hoye, Robert LZ (2020-06-22). Rapid Vapor-Phase Deposition of High-Mobility p-Type Buffer Layers on Perovskite Photovoltaics for Efficient Semitransparent Devices. ACS Energy Letters : 2456-2465. ScholarBank@NUS Repository. https://doi.org/10.1021/acsenergylett.0c00763
Abstract: Perovskite solar cells (PSCs) with transparent electrodes can be integrated with existing solar panels in tandem configurations to increase the power conversion efficiency. A critical layer in semi-transparent PSCs is the inorganic buffer layer, which protects the PSC against damage when the transparent electrode is sputtered on top. The development of n-i-p structured semi-transparent PSCs has been hampered by the lack of suitable p-type buffer layers. In this work we develop a p-type CuOx buffer layer, which can be grown uniformly over the perovskite device without damaging the perovskite or organic charge transport layers, can be grown using industrially scalable techniques and has high hole mobility (4.3 +/- 2 cm2 V-1 s-1), high transmittance (>95%), and a suitable ionisation potential for hole extraction (5.3 +/- 0.2 eV). Semi-transparent PSCs with efficiencies up to 16.7% are achieved using the CuOx buffer layer. Our work demonstrates a new approach to integrate PSCs into tandem configurations, as well as enable the development of other devices that need high quality p-type layers.
Source Title: ACS Energy Letters
URI: https://scholarbank.nus.edu.sg/handle/10635/171579
ISSN: 23808195
DOI: 10.1021/acsenergylett.0c00763
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