Please use this identifier to cite or link to this item: https://doi.org/10.1109/JPHOTOV.2019.2903177
Title: Determination of Metal-Induced Recombination of n-Type Bifacial Si Solar Cells Using Special Print Patterns
Authors: Ananthanarayanan, D
Wong, J
Wang, EC
CHEN NING 
HO JIAN WEI 
ABERLE,ARMIN GERHARD 
Issue Date: 1-May-2019
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Citation: Ananthanarayanan, D, Wong, J, Wang, EC, CHEN NING, HO JIAN WEI, ABERLE,ARMIN GERHARD (2019-05-01). Determination of Metal-Induced Recombination of n-Type Bifacial Si Solar Cells Using Special Print Patterns. IEEE Journal of Photovoltaics 9 (3) : 643-651. ScholarBank@NUS Repository. https://doi.org/10.1109/JPHOTOV.2019.2903177
Abstract: A systematic routine to determine the front and rear metal induced recombination losses of bifacial silicon solar cells using an automated Griddler finite-element method fit procedure is presented in this paper. The method prescribes the preparation of easy-to-fabricate test patterns printed on the front and rear side of separate cells, nonmetallized cells, and simple photoluminescence imaging. Eight different samples with similar front boron emitter and different phosphorus back surface fields (BSFs) are analyzed. Choosing an optimized BSF is shown to lead to a cell efficiency gain of ∼0.4% absolute.
Source Title: IEEE Journal of Photovoltaics
URI: https://scholarbank.nus.edu.sg/handle/10635/171030
ISSN: 2156-3381
2156-3403
DOI: 10.1109/JPHOTOV.2019.2903177
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